Jagtar S Basi

US Patent:

41294572, Dec 12, 1978

Filed:

May 23, 1977

Appl. No.:

5/799886

Inventors:

Jagtar S. Basi - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B08B 308

US Classification:

134 2

Abstract:

Semiconductor materials are cleaned after silica polishing by treatment with an aqueous quarternary ammonium salt solution followed by rinsing in water. The treatment coagulates the silica sols and suspends them so that they do not form a film on the semiconductor surface. The treatment preserves the hydrophobic nature of the polished surface.

US Patent:

40579395, Nov 15, 1977

Filed:

Dec 5, 1975

Appl. No.:

5/638018

Inventors:

Jagtar S. Basi - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B24B 100

US Classification:

51281R

Abstract:

The polishing of monocrystalline silicon wafers with an aqueous composition of fine sized abrasive particles, a soluble alkali metal base such a sodium carbonate and an oxidizing agent such as sodium or potassium salt of dichloroisocyanuric acid (e. g. , salts of halo-trizenetrione).

US Patent:

44352476, Mar 6, 1984

Filed:

Mar 10, 1983

Appl. No.:

6/473938

Inventors:

Jagtar S. Basi - Fishkill NY
Eric Mendel - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B44C 122
C03C 1500
C03C 2506

US Classification:

156636

Abstract:

A method for the chemical-mechanical polishing of titanium carbide surfaces to a high degree of perfection is described. The titanium carbide surfaces are continuously wetted with a water slurry containing a soft abrasive material. The continuously wiping of the titanium carbide surface is accomplished with a firm surface using pressure while maintaining a relative movement between the titanium carbide surface and the firm surface to remove the water reacted titanium carbide product from the high points of the titanium carbide surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water. The titanium carbide surface can also include an aluminum oxide component. Where aluminum oxide is present it is preferred to have about 60 to 80% aluminum oxide and 40 to 20% titanium carbide by weight in the surface structure.

US Patent:

40509540, Sep 27, 1977

Filed:

Mar 25, 1976

Appl. No.:

5/670508

Inventors:

Jagtar S. Basi - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C03C 2300

US Classification:

134 2

Abstract:

The invention comprehends establishing a hydrophilic surface on polished semiconductor wafers, such as silicon, after polishing (e. g. silica polishing) by oxidation and hydrolysis of the wafer surface for conditioning thereof for post-polishing cleaning.

US Patent:

39517101, Apr 20, 1976

Filed:

Sep 13, 1974

Appl. No.:

5/505699

Inventors:

Jagtar S. Basi - Fishkill NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B44D 512
H01L 700

US Classification:

156 17

Abstract:

Copper contaminants are removed from silicon with a solution containing copper (II) complexes. The solution may be recycled after use by bubbling oxygen through it.

US Patent:

39308707, Jan 6, 1976

Filed:

Dec 28, 1973

Appl. No.:

5/429418

Inventors:

Jagtar Singh Basi - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C09K 1304

US Classification:

106 3

Abstract:

An improved process for preparing a polishing solution for use in the chemical-mechanical polishing of silicon comprising copper nitrate, ammonium fluoride, nitric acid and ammonium nitrate. The latter two components are added to the copper nitrate, the system mixed well and then the ammonium fluoride added. The process eliminates the need for settling, decantation or filtration during solution preparation and permits substantially lowered amounts of copper nitrate to be used for silicon polishing. The silicon polishing solution is also described.

US Patent:

T154023, May 7, 1985

Filed:

Apr 23, 1984

Appl. No.:

6/603263

Inventors:

Jagtar S. Basi - Fishkill NY
Eric Mendel - Poughkeepsie NY

International Classification:

H01L 21306

US Classification:

156636

Abstract:

A method for the chemical-mechanical polishing of amorphous aluminum oxide surfaces to a high degree of perfection is described. The aluminum oxide surfaces are continuously wetted with a water-citric acid slurry containing a soft abrasive material. The continuously wiping of the aluminum oxide surface is accomplished with a firm surface using pressure while maintaining a relative movement between the aluminum oxide surface and the firm surface to remove the water reacted aluminum oxide product from the high points of the aluminum oxide surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water containing citric acid.

US Patent:

45493740, Oct 29, 1985

Filed:

Jan 14, 1985

Appl. No.:

6/690917

Inventors:

Jagtar S. Basi - Fishkill NY
Eric Mandel - Poughkeepsie NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B24B 100

US Classification:

51283R

Abstract:

Semiconductor wafers are polished with an abrasive slurry which is prepared by dispersing montmorillonite clay in deionized water. The pH of the slurry is adjusted to 9. 5 to 12. 5 by adding alkali such as NaOH and KOH.