Yujing Living Wu

US Patent:

6781195, Aug 24, 2004

Filed:

Jan 23, 2001

Appl. No.:

09/766966

Inventors:

Yujing Wu - Chandler AZ
Jeffrey Pearse - Chandler AZ

Assignee:

Semiconductor Components Industries, L.L.C. - Phoenix AZ

International Classification:

H01L 2976

US Classification:

257329, 257330, 257331, 257341

Abstract:

A semiconductor switching device ( ) is formed on a semiconductor substrate ( ) having a trench ( ) formed on one of its surfaces ( ). A control electrode ( ) activates a wall of the trench to form a conduction channel ( ). A first conduction electrode ( ) is disposed on the semiconductor substrate to have a first doped region ( ) for receiving a current and a second doped region ( ) for routing the current to the conduction channel.

US Patent:

6943408, Sep 13, 2005

Filed:

May 6, 2004

Appl. No.:

10/840486

Inventors:

Yujing Wu - Chandler AZ, US
Jeffrey Pearse - Chandler AZ, US

Assignee:

Semiconductor Components Industries, L.L.C. - Phoenix AZ

International Classification:

H01L029/76
H01L029/94
H01L031/062

US Classification:

257329, 257330, 257331

Abstract:

A semiconductor switching device () is formed on a semiconductor substrate () having a trench () formed on one of its surfaces (). A control electrode () activates a wall of the trench to form a conduction channel (). A first conduction electrode () is disposed on the semiconductor substrate to have a first doped region () for receiving a current and a second doped region () for routing the current to the conduction channel.

US Patent:

6531376, Mar 11, 2003

Filed:

Apr 17, 2002

Appl. No.:

10/123657

Inventors:

Weizhong Cai - Scottsdale AZ
Chandrasekhara Sudhama - Phoenix AZ
Yujing Wu - Chandler AZ
Keith Kamekona - Scottsdale AZ

Assignee:

Semiconductor Components Industries LLC - Phoenix AZ

International Classification:

H01L 2176

US Classification:

438422, 438411, 438456, 438619, 438238, 438381, 438329, 438412

Abstract:

A method of making a semiconductor device ( ) having a low permittivity region ( ) includes forming a first layer ( ) over a surface of a trench ( ), and etching through an opening ( ) in the first layer that is smaller than a width (W ) of the trench to remove a first material ( ) from the trench. A second material ( ) is deposited to plug the opening to seal an air pocket ( ) in the trench. The low permittivity region features air pockets with a high volume because the small size of the opening allows the second material to plug the trench without accumulating significantly in the trench.

US Patent:

20220293771, Sep 15, 2022

Filed:

Mar 11, 2021

Appl. No.:

17/199153

Inventors:

- Eindhoven, NL
Ronghua Zhu - Chandler AZ, US
Zhihong Zhang - Chandler AZ, US
Yujing Wu - Chandler AZ, US
Pete Rodriquez - Phoenix AZ, US

International Classification:

H01L 29/66
H01L 29/06
H01L 21/8234
H01L 29/78

Abstract:

A method for manufacturing a semiconductor device includes forming a plate structure over an isolation region. A drain electrode electrically connected to a drift region underlying the isolation region is formed, wherein the drain electrode is separated from a first location of the plate structure by a first distance along a central axis of an active area of the semiconductor device in a direction of a current flow between a source and a drain of the semiconductor device, the drain electrode is separated from a second location of the plate structure by a second distance along a line parallel to the central axis and within the active area. The first distance is less than the second distance.