Yoshiyuki Kikuchi from Hillsboro, OR, age 44

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Semiconductor Device And Manufacturing Method Therefor
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US Patent:

7902641, Mar 8, 2011
Filed:

Jul 24, 2008
Appl. No.:

12/220625
Inventors:

Yoshiyuki Kikuchi - Hillsboro OR, US
Assignee:

Tokyo Electron Limited - Tokyo
International Classification:

H01L 23/58
US Classification:

257642, 257635, 257759, 257760, 257E21264, 438584, 438623, 438780
Abstract:

The present invention relates to a semiconductor device. The semiconductor device includes a fluorocarbon film formed on a substrate and a film containing metal formed on the fluorocarbon film, wherein the content amount of fluorine atom on the fluorocarbon film, which contacts the film containing metal, is in a predetermined range.

Semiconductor Device And Manufacturing Method Therefor
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US Patent:

8334204, Dec 18, 2012
Filed:

Jul 24, 2008
Appl. No.:

12/220555
Inventors:

Takaaki Matsuoka - Minato-ku, JP
Shinji Ide - Hillsboro OR, US
Yoshiyuki Kikuchi - Hillsboro OR, US
Assignee:

Tokyo Electron Limited - Tokyo
International Classification:

H01L 21/4763
US Classification:

438637, 438643, 438672, 438687, 257E21577
Abstract:

The present invention relates to a manufacturing method for a semiconductor device, the method includes a process for forming an interlayer film on a substrate, a process for forming an opening in the interlayer, a process for forming a conductive layer which fills the opening, and a process for forming a cap film on the surface of the conductive layer. In the process for forming the cap film, a reduction process for the surface of the conductive layer and the forming of the film are performed simultaneously.

Amorphous Carbon Film, Semiconductor Device, Film Forming Method, Film Forming Apparatus And Storage Medium
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US Patent:

20100032838, Feb 11, 2010
Filed:

Nov 30, 2007
Appl. No.:

12/516862
Inventors:

Yoshiyuki Kikuchi - Hillsboro OR, US
Yasuo Kobayashi - Yamanashi, JP
Kohei Kawamura - Yamanashi, JP
Toshihisa Nozawa - Hyogo, JP
Hiraku Ishikawa - Miyagi, JP
Assignee:

TOKYO ELECTRON LIMITED - Tokyo
International Classification:

H01L 23/532
H01L 21/314
C09D 1/00
US Classification:

257751, 438778, 1062868, 257E23154, 257E2127
Abstract:

Provided is an amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed low dielectric constant, a semiconductor device including the amorphous carbon film and a technology for forming the amorphous carbon film. Since the amorphous carbon film is formed by controlling an additive amount of Si (silicon) during film formation, it is possible to form the amorphous carbon film having a high elastic modulus and a low thermal contraction rate with a suppressed dielectric constant as low as 3.3 or less. Accordingly, when the amorphous carbon film is used as a film in the semiconductor device, troubles such as a film peeling can be suppressed.