Tetsuya A Mishima

US Patent:

20090169843, Jul 2, 2009

Filed:

Jan 2, 2008

Appl. No.:

11/968544

Inventors:

Tetsuya Mishima - Norman OK, US
Madhavie Edirisooriya - Norman OK, US
Michael B. Santos - Norman OK, US

International Classification:

B32B 7/02
C30B 19/00

US Classification:

428212, 117 54, 438478, 257E21461

Abstract:

A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.

US Patent:

20120044964, Feb 23, 2012

Filed:

Dec 21, 2010

Appl. No.:

12/975008

Inventors:

Rui Q. Yang - Norman OK, US
Tetsuya Mishima - Norman OK, US
Michael B. Santos - Norman OK, US
Zhaobing Tian - Norman OK, US
Matthew B. Johnson - Norman OK, US
Robert T. Hinkey - Norman OK, US

International Classification:

H01S 5/323

US Classification:

372 4501

Abstract:

A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.

US Patent:

20120199185, Aug 9, 2012

Filed:

Feb 9, 2011

Appl. No.:

13/024203

Inventors:

Rui Q. Yang - Norman OK, US
Zhaobing Tian - Norman OK, US
Tetsuya D. Mishima - Norman OK, US
Michael B. Santos - Norman OK, US
Matthew B. Johnson - Norman OK, US
John F. Klem - Albuquerque NM, US

Assignee:

BOARD OF REGENTS UNIVERSITY OF OKLAHOMA - Norman OK

International Classification:

H01L 31/0248
H01L 31/0264
H01L 31/0336
H01L 31/0296
H01L 31/0304
H01L 31/032
H01L 31/02
H01L 31/0272

US Classification:

136255, 136252, 136262, 136264, 136260

Abstract:

A photovoltaic (PV) device, comprising a PV interband cascade (IC) stage, wherein the IC PV stage comprises an absorption region with a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier. An IC PV architecture for a photovoltaic device, the IC PV architecture comprising an absorption region, an intraband transport region coupled to the absorption region, and an interband tunneling region coupled to the intraband transport region and to the adjacent absorption region, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region.

US Patent:

20160013619, Jan 14, 2016

Filed:

Dec 16, 2014

Appl. No.:

14/571945

Inventors:

- Norman OK, US
Tetsuya Mishima - Norman OK, US
Michael B. Santos - Norman OK, US
Zhaobing Tian - Norman OK, US
Matthew B. Johnson - Norman OK, US
Robert T. Hinkey - Norman OK, US

International Classification:

H01S 5/34
H01S 5/32
H01S 5/343
H01S 5/20

Abstract:

A semiconductor interband laser that includes a first cladding layer formed using a first high-doped semiconductor material having a first refractive index/permittivity and a second cladding layer formed using a second high-doped semiconductor material having a second refractive index/permittivity. The laser also includes a waveguide core having a waveguide core refractive index/permittivity, the waveguide core is positioned between the first and the second cladding layers. The waveguide core including an active region adapted to generate light based on interband transitions. The light being generated defines the lasing wavelength or the lasing frequency. The first refractive index and the second refractive index are lower than the waveguide core refractive index. The first cladding layer and/or the second cladding layers can also be formed using a metal.