Son T Trinh

US Patent:

6375748, Apr 23, 2002

Filed:

Sep 1, 1999

Appl. No.:

09/387928

Inventors:

Joseph Yudovsky - Campbell CA
Tom Madar - Sunnyvale CA
Salvador Umotoy - Antioch CA
Son Ngoc Trinh - Cupertino CA
Lawrence C. Lei - Milpitas CA
Anzhong (Andrew) Chang - San Jose CA
Xiaoxiong (John) Yuan - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118728, 118715, 156345

Abstract:

A substrate support having a removable edge ring, which is made of a material having a lower coefficient of thermal expansion (CTE), than that of the substrate support is provided. The edge ring and the substrate support are configured for pin and slot coupling. Specifically, either the edge ring, or the substrate support comprises a plurality of pins, and the other of the edge ring or the substrate support comprises a plurality of hollow regions or slots in which the pins may be inserted. The slots are at least as wide as a corresponding one of the plurality of pins and extend in the direction in which the substrate support expands and contracts during thermal cycling. Each of the slots extends a length which is sufficient to compensate for the difference between the CTE of the substrate support and the CTE of the edge ring, over the range of process temperatures to which the apparatus is exposed. Preferably the susceptor is made of aluminum, and the edge ring is made of ceramic. A restrictor gap may be defined between a surface of the substrate support and a surface of the purge ring so as to restrict a volume of purge gas flowing to an edge of a substrate positioned on the substrate support.

US Patent:

6461435, Oct 8, 2002

Filed:

Jun 22, 2000

Appl. No.:

09/603117

Inventors:

Karl A. Littau - Palo Alto CA
Bevan Vo - Santa Clara CA
Salvador P. Umotoy - Antioch CA
Son N. Trinh - Cupertino CA
Ken Kaung Lai - Milpitas CA
Bo Zheng - San Jose CA
Ping Jian - San Jose CA
Siqing Lu - Sunnyvale CA
Anzhong Chang - San Jose CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118715, 118724, 118725

Abstract:

A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.

US Patent:

6603269, Aug 5, 2003

Filed:

Jun 13, 2000

Appl. No.:

09/593586

Inventors:

Be Van Vo - Santa Clara CA
Salvador P. Umotoy - Antioch CA
Son N. Trinh - Cupertino CA
Lawrence Chung-Lai Lei - Milpitas CA
Sergio Edelstein - Los Gatos CA
Avi Tepman - Cupertino CA
Kenneth Tsai - Emerald Hills CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

31511121, 118723 ME, 156345, 2504922

Abstract:

An improved plasma applicator for remotely generating a plasma for use in semiconductor manufacturing is provided. In one embodiment, a plasma applicator is comprised of a chamber assembly, a removable waveguide adapter and a circular clamp which secures the adapter to the chamber assembly. The chamber assembly includes an aperture plate, a microwave transparent window, a chamber body and a microwave sensor which is mounted on the chamber body. The chamber body has a proximate end opening adapted to admit microwave energy into the cavity and a distal end disposed generally on the opposite side of the cavity from the proximate end opening. The chamber body further has a gas outlet port adapted to permit the flow of an excited gas out of the cavity and a gas inlet port adapted to admit a precursor gas into the cavity. The gas inlet port has a center axis which is disposed between the proximate end opening of the chamber body and the midpoint between the proximate end opening and the distal end of the body.

US Patent:

7025862, Apr 11, 2006

Filed:

Oct 22, 2002

Appl. No.:

10/278527

Inventors:

Harald Herchen - Los Altos CA, US
Henan Hao - Fremont CA, US
Celina M. Esteban - Redwood City CA, US
Timothy R. Webb - San Mateo CA, US
Son N. Trinh - Cupertino CA, US

Assignee:

Applied Materials - Santa Clara CA

International Classification:

C25B 9/00

US Classification:

20429706, 20429708, 20429709, 2042971, 204199, 204213, 204224 R, 29825, 29874, 29729, 29745

Abstract:

An apparatus for providing an electrical bias to a substrate in a processing system is described. The apparatus generally includes a conductive annular body defining a central opening. The conductive annular body may have a substrate seating surface adapted to receive the substrate and a plurality of scallops formed on a surface opposing the substrate seating surface. A plurality of electrical contacts may be formed on the substrate seating surface opposite the plurality of scallops. The electrical contacts may be adapted to engage a plating surface of the substrate.

US Patent:

7396480, Jul 8, 2008

Filed:

May 24, 2005

Appl. No.:

11/137609

Inventors:

Chiukin (Steven) Lai - Sunnyvale CA, US
Sal Umotoy - Antioch CA, US
Joel M. Huston - San Jose CA, US
Son Trinh - Cupertino CA, US
Mei Chang - Saragoga CA, US
Xiaoxiong (John) Yuan - Cupertino CA, US
Yu Chang - San Jose CA, US
Xinliang Lu - Sunnyvale CA, US
Wei W. Wang - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/461
H01L 21/302

US Classification:

216 58, 438715, 438692, 438732

Abstract:

A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surface is then cooled within the chamber and the reactive species are directed to the cooled substrate surface to react with the native oxides thereon and form a film on the substrate surface. The substrate surface is then heated within the chamber to vaporize the film.

US Patent:

7520957, Apr 21, 2009

Filed:

May 24, 2005

Appl. No.:

11/137199

Inventors:

Chiukin (Steven) Lai - Sunnyvale CA, US
Sal Umotoy - Antioch CA, US
Joel M. Huston - San Jose CA, US
Son Trinh - Cupertino CA, US
Mei Chang - Saragoga CA, US
Xiaoxiong (John) Yuan - Cupertino CA, US
Yu Chang - San Jose CA, US
Xinliang Lu - Sunnyvale CA, US
Wei W. Wang - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/00
C23C 16/00

US Classification:

15634543, 15634535, 15634545, 118723 R, 118723 DC, 118723 E, 118723 ER, 118723 IR

Abstract:

A lid assembly for semiconductor processing is provided. In at least one embodiment, the lid assembly includes a first electrode comprising an expanding section that has a gradually increasing inner diameter. The lid assembly also includes a second electrode disposed opposite the first electrode. A plasma cavity is defined between the inner diameter of the expanding section of the first electrode and a first surface of the second electrode.

US Patent:

7767024, Aug 3, 2010

Filed:

Jun 6, 2008

Appl. No.:

12/134715

Inventors:

Chiukin (Steven) Lai - Sunnyvale CA, US
Sal Umotoy - Antioch CA, US
Joel M. Huston - San Jose CA, US
Son Trinh - Cupertino CA, US
Mei Chang - Saragoga CA, US
Xiaoxiong (John) Yuan - San Jose CA, US
Yu Chang - San Jose CA, US
Xinliang Lu - Sunnyvale CA, US
Wei W. Wang - Santa Clara CA, US

Assignee:

Appplied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/302

US Classification:

134 12, 216 67, 438715

Abstract:

In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65 C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100 C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.

US Patent:

20040069651, Apr 15, 2004

Filed:

Oct 15, 2002

Appl. No.:

10/273044

Inventors:

Harald Herchen - Los Altos CA, US
Henan Hao - Fremont CA, US
Timothy Webb - San Mateo CA, US
Quyen Pham - Sunnyvale CA, US
Son Trinh - Cupertino CA, US
Deenesh Padhi - Santa Clara CA, US

Assignee:

Applied Materials, Inc.

International Classification:

C25D005/34

US Classification:

205/205000, 204/242000

Abstract:

Method and apparatus for electrodepositing a metal onto a substrate. An oxide treatment process is performed on a substrate prior to making electrical contact between a seed layer of the substrate and a conductive contact element which provides a current. In one embodiment, the pressure at the interface between the seed layer and the conductive contact element is controlled to avoid detrimentally affecting a material(s) of the substrate.