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Shuiyuan H Huang

age ~55

from Eagan, MN

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Also known as:
  • Huang Shuiyuan
  • N Huang
  • Hung S
Phone and address:
3615 Great Oaks Cir, Saint Paul, MN 55123
Related to:
Connected to:

Shuiyuan Huang Phones & Addresses

  • 3615 Great Oaks Cir, Saint Paul, MN 55123
  • 15244 Dunlin Ct, Apple Valley, MN 55124 • 9524232279
  • Eagan, MN
  • 1325 Prairie View Trl, Farmington, MN 55024 • 6514602136
  • Minneapolis, MN

Work

  • Company:
    D-wave systems inc.
    Apr 2017
  • Position:
    Technical lead of qpu microfabrication

Education

  • Degree:
    Doctorates, Doctor of Philosophy
  • School / High School:
    Tsinghua University
    1992 to 1997
  • Specialities:
    Chemical Engineering

Skills

Design of Experiments • Semiconductors • Cmos • R&D • Cvd • Etching • Thin Films • Spc • Sensors • Metrology • Jmp • Process Integration • Characterization • Failure Analysis • Process Simulation • Diffusion • Process Engineering • Yield • Ic • Nanotechnology • Pvd • Pecvd • Semiconductor Industry • Silicon • Engineering Management • Mixed Signal • Photolithography • Doe • Electronics • Manufacturing • Clean • Materials Science • Six Sigma • Simulations

Languages

Mandarin • English

Industries

Semiconductors

Us Patents

  • Planar Programmable Metallization Memory Cells

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  • US Patent:
    7847278, Dec 7, 2010
  • Filed:
    Sep 19, 2008
  • Appl. No.:
    12/233770
  • Inventors:
    Antoine Khoueir - Apple Valley MN, US
    Haiwen Xi - Prior Lake MN, US
    Shuiyuan Huang - Apple Valley MN, US
  • Assignee:
    Seagate Technology LLC - Scotts Valley CA
  • International Classification:
    H01L 47/00
  • US Classification:
    257 4
  • Abstract:
    Programmable metallization memory cells that have an inert electrode and an active electrode positioned in a non-overlapping manner in relation to a substrate. A fast ion conductor material is in electrical contact with and extends from the inert electrode to the active electrode, the fast ion conductor including superionic clusters extending from the inert electrode to the active electrode. A metal layer extends from the inert electrode to the active electrode, yet is electrically insulated from each of the inert electrode and the active electrode by the fast ion conductor material. Methods for forming programmable metallization cells are also disclosed.

  • Magnet-Assisted Transistor Devices

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  • US Patent:
    7948045, May 24, 2011
  • Filed:
    Aug 18, 2008
  • Appl. No.:
    12/193065
  • Inventors:
    Yang Li - Bloomington MN, US
    Insik Jin - Eagan MN, US
    Harry Liu - Maple Grove MN, US
    Song S. Xue - Edina MN, US
    Shuiyuan Huang - Apple Valley MN, US
    Michael X. Tang - Bloomington MN, US
  • Assignee:
    Seagate Technology LLC - Scotts Valley CA
  • International Classification:
    H01L 29/82
    H01L 21/00
    H01L 21/336
  • US Classification:
    257421, 257295, 257315, 257427, 257E29272, 257E293, 257E29324, 257E29436, 257E21665, 438 3, 438 48, 438257
  • Abstract:
    A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.

  • Active Protection Device For Resistive Random Access Memory (Rram) Formation

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  • US Patent:
    7965538, Jun 21, 2011
  • Filed:
    Jul 13, 2009
  • Appl. No.:
    12/502224
  • Inventors:
    Yongchul Ahn - Eagan MN, US
    Antoine Khoueir - Apple Valley MN, US
    Shuiyuan Huang - Apple Valley MN, US
    Peter Nicholas Manos - Eden Prairie MN, US
    Maroun Khoury - Burnsville MN, US
  • Assignee:
    Seagate Technology LLC - Scotts Valley CA
  • International Classification:
    G11C 11/00
  • US Classification:
    365148, 365171, 365226
  • Abstract:
    Apparatus and method for providing overcurrent protection to a resistive random access memory (RRAM) cell during an RRAM formation process used to prepare the cell for normal read and write operations. In accordance with various embodiments, the RRAM cell is connected between a first control line and a second control line, and an active protection device (APD) is connected between the second control line and an electrical ground terminal. A formation current is applied through the RRAM cell, and an activation voltage is concurrently applied to the APD to maintain a maximum magnitude of the formation current below a predetermined threshold level.

  • Non-Volatile Memory With Programmable Capacitance

    view source
  • US Patent:
    7977722, Jul 12, 2011
  • Filed:
    May 20, 2008
  • Appl. No.:
    12/123662
  • Inventors:
    Xuguang Wang - Maple Grove MN, US
    Shuiyuan Huang - Apple Valley MN, US
    Dimitar V. Dimitrov - Edina MN, US
    Michael Xuefei Tang - Bloomington MN, US
    Song S. Xue - Edina MN, US
  • Assignee:
    Seagate Technology LLC - Scotts Valley CA
  • International Classification:
    H01L 29/92
  • US Classification:
    257300, 257296, 257298, 257306, 257312, 257E29345
  • Abstract:
    Non-volatile memory with programmable capacitance is disclosed. Illustrative data memory units include a substrate including a source region and a drain region. A first insulating layer is over the substrate. A second insulating layer is over the substrate and between the source region and drain region. A solid electrolyte layer is between the first insulating layer and second insulating layer. The solid electrolyte layer has a capacitance that is controllable between at least two states. A first electrode is electrically coupled to a first side of the solid electrolyte layer and is electrically coupled to a voltage source. A second electrode is electrically coupled to a second side of the solid electrolyte layer and is electrically coupled to the voltage source. Multi-bit memory units are also disclosed.

  • Programmable Metallization Memory Cells Via Selective Channel Forming

    view source
  • US Patent:
    8097902, Jan 17, 2012
  • Filed:
    Jul 10, 2008
  • Appl. No.:
    12/170519
  • Inventors:
    Haiwen Xi - Prior Lake MN, US
    Ming Sun - Eden Prairie MN, US
    Dexin Wang - Eden Prairie MN, US
    Shuiyuan Huang - Apple Valley MN, US
    Michael Tang - Bloomington MN, US
    Song S. Xue - Edina MN, US
  • Assignee:
    Seagate Technology LLC - Scotts Valley CA
  • International Classification:
    H01L 29/66
  • US Classification:
    257154, 257 9, 257E27004, 257E27071, 438 95
  • Abstract:
    A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed.

  • Programmable Metallization Memory Cells Via Selective Channel Forming

    view source
  • US Patent:
    8334165, Dec 18, 2012
  • Filed:
    Apr 16, 2010
  • Appl. No.:
    12/761899
  • Inventors:
    Haiwen Xi - Prior Lake MN, US
    Ming Sun - Eden Prairie MN, US
    Dexin Wang - Eden Prairie MN, US
    Shuiyuan Huang - Apple Valley MN, US
    Michael Tang - Bloomington MN, US
    Song S. Xue - Edina MN, US
  • Assignee:
    Seagate Technology LLC - Scotts Valley CA
  • International Classification:
    H01L 21/00
  • US Classification:
    438 95, 257154, 257537, 257E27004, 257E27006, 257E27071
  • Abstract:
    Methods for making a programmable metallization memory cell are disclosed.

  • Programmable Metallization Memory Cells Via Selective Channel Forming

    view source
  • US Patent:
    8399908, Mar 19, 2013
  • Filed:
    Jan 11, 2012
  • Appl. No.:
    13/348253
  • Inventors:
    Haiwen Xi - Prior Lake MN, US
    Ming Sun - Eden Prairie MN, US
    Dexin Wang - Eden Prairie MN, US
    Shuiyuan Huang - Apple Valley MN, US
    Michael Tang - Bloomington MN, US
    Song S. Xue - Edina MN, US
  • Assignee:
    Seagate Technology LLC - Scotts Valley CA
  • International Classification:
    H01L 29/66
  • US Classification:
    257154, 257 9, 257E27004, 257E27071, 438 95
  • Abstract:
    Methods for making a programmable metallization memory cell are disclosed.

  • Magnet-Assisted Transistor Devices

    view source
  • US Patent:
    8476721, Jul 2, 2013
  • Filed:
    Apr 18, 2011
  • Appl. No.:
    13/088832
  • Inventors:
    Yang Li - Bloomington MN, US
    Insik Jin - Eagan MN, US
    Harry Liu - Maple Grove MN, US
    Song S. Xue - Edina MN, US
    Shuiyuan Huang - Apple Valley MN, US
    Michael X. Tang - Bloomington MN, US
  • Assignee:
    Seagate Technology LLC - Scotts Valley CA
  • International Classification:
    H01L 29/82
    H01L 21/00
    H01L 21/326
  • US Classification:
    257421, 257295, 257315, 257427, 257E293, 257E29324, 257E29327, 257E21436, 257E21665, 438 3, 438 48
  • Abstract:
    A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.

Resumes

Shuiyuan Huang Photo 1

Technical Lead Of Qpu Microfabrication

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Location:
3615 Great Oaks Cir, Saint Paul, MN 55123
Industry:
Semiconductors
Work:
D-Wave Systems Inc.
Technical Lead of Qpu Microfabrication
Polar Semiconductor, Llc Oct 2009 - Apr 2017
Process Engineering Section Manager
Western Digital Jul 2009 - Oct 2009
Staff Enginner - Process Development
Seagate Technology Mar 2007 - Jul 2009
Senior Staff Integration Engineer R and D
Cypress Semiconductor Corporation May 2001 - Feb 2007
Senior and Staff and Senior Staff Process Development Engineer R and D
Education:
Tsinghua University 1992 - 1997
Doctorates, Doctor of Philosophy, Chemical Engineering Tsinghua University 1990 - 1992
Bachelors, Bachelor of Arts, Management Tsinghua University 1987 - 1992
Bachelor of Engineering, Bachelors, Chemical Engineering
Skills:
Design of Experiments
Semiconductors
Cmos
R&D
Cvd
Etching
Thin Films
Spc
Sensors
Metrology
Jmp
Process Integration
Characterization
Failure Analysis
Process Simulation
Diffusion
Process Engineering
Yield
Ic
Nanotechnology
Pvd
Pecvd
Semiconductor Industry
Silicon
Engineering Management
Mixed Signal
Photolithography
Doe
Electronics
Manufacturing
Clean
Materials Science
Six Sigma
Simulations
Languages:
Mandarin
English

Youtube

20091202-A sad Singaporean fable.wmv

20091202-A sad Singaporean fable.wmv

A sad Singaporean fable Next we have two sister-stories, each about a ...

  • Category:
    Nonprofits & Activism
  • Uploaded:
    03 Dec, 2009
  • Duration:
    3m 41s
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