Abstract:
Three processes for the manufacture of polyhedral oligomeric silsesquioxanes (POSS) which utilize the action of bases that are capable of either attacking silicon or any compound that can react with a protic solvent (e. g. ROH, HO etc. ) and generate hydroxide [OH], alkoxide [RO]′, etc. The first process utilizes such bases to effectively redistribute the silicon-oxygen frameworks in polymeric silsesquioxanes [RSiO]where ∞=1-1,000,000 or higher into POSS nanostructures of formulas [(RSiO)Σ#, homoleptic, [(RXSiO)]Σ#, functionalized homoleptic, [(RSiO)(R′SiO)], heteroleptic, and {(RSiO)(RXSiO)}, functionalized heteroleptic nanostructures. The second process utilizes base to aid in the formation of POSS nanostructures of formulas [(RSiO)]Σ# homoleptic and [(RSiO)(R′SiO)] heteroleptic and [(RSiO)(RXSiO)] functionalized heteroleptic nanostructures from silanes RSiXand linear or cyclic silsesquioxanes of the formula RXSi—(OSiRX)—OSiRXwhere m=0-10, X=OH, Cl, Br, I, alkoxide OR, acetate OOCR, peroxide OOR, amine NR, isocyanate NCO, and R. The third process utilizes base to selectively ring-open the silicon-oxygen-silicon (Si—O—Si) bonds in POSS structures to form POSS species with incompletely condensed nanostructures. These processes also afford stereochemical control over X.