Paul Lee Deaton

US Patent:

7775508, Aug 17, 2010

Filed:

Oct 31, 2006

Appl. No.:

11/554954

Inventors:

Kenric T. Choi - Santa Clara CA, US
Pravin K. Narwankar - Sunnyvale CA, US
Shreyas S. Kher - Campbell CA, US
Son T. Nguyen - San Jose CA, US
Paul Deaton - San Jose CA, US
Khai Ngo - Cedar Park TX, US
Paul Chhabra - Austin TX, US
Alan H. Ouye - San Mateo CA, US
Dien-Yeh (Daniel) Wu - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B01F 3/04

US Classification:

261127, 261135, 261142, 261 43, 261 52, 261 61, 261123

Abstract:

A method and apparatus for providing a precursor to a process chamber is described. The apparatus comprises an ampoule capable of receiving either a liquid precursor source material or a solid precursor source material. The ampoule is capable of delivering either a liquid precursor material to a vaporizer coupled to the process chamber, or a vaporized or gaseous precursor material to the process chamber. The ampoule also includes a continuous level sensor to accurately monitor the level of precursor source material within the ampoule.

US Patent:

7794544, Sep 14, 2010

Filed:

Oct 26, 2007

Appl. No.:

11/925684

Inventors:

Son T. Nguyen - San Jose CA, US
Kedarnath Sangam - Sunnyvale CA, US
Miriam Schwartz - Los Gatos CA, US
Kenric Choi - Santa Clara CA, US
Sanjay Bhat - Bangalore, IN
Pravin K. Narwankar - Sunnyvale CA, US
Shreyas Kher - Campbell CA, US
Rahul Sharangapani - Fremont CA, US
Shankar Muthukrishnan - San Jose CA, US
Paul Deaton - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
E03B 1/00
F17D 1/00
F15C 1/16

US Classification:

118715, 137 8, 137808

Abstract:

The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

US Patent:

8465903, Jun 18, 2013

Filed:

Oct 6, 2011

Appl. No.:

13/267341

Inventors:

Timothy W. Weidman - Sunnyvale CA, US
Timothy Michaelson - Milpitas CA, US
Paul Deaton - San Jose CA, US
Nitin K. Ingle - Santa Clara CA, US
Abhijit Basu Mallick - Palo Alto CA, US
Amit Chatterjee - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G03C 5/00
G03F 7/00
G03F 7/027
G03F 7/039
G03F 7/075

US Classification:

430296, 430325, 430327, 430328, 430330, 430331, 430942, 430966, 430967

Abstract:

Methods for forming photoresists sensitive to radiation on a substrate are provided. Described are chemical vapor deposition methods of forming films (e. g. , silicon-containing films) as photoresists using a plasma which may be exposed to radiation to form a pattern. The deposition methods utilize precursors with cross-linkable moieties that will cross-link upon exposure to radiation. Radiation may be carried out in the with or without the presence of oxygen. Exposed or unexposed areas may then be developed in an aqueous base developer.

US Patent:

8536068, Sep 17, 2013

Filed:

Oct 6, 2011

Appl. No.:

13/267213

Inventors:

Timothy W. Weidman - Sunnyvale CA, US
Timothy Michaelson - Milpitas CA, US
Paul Deaton - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/31

US Classification:

438780, 257E21259

Abstract:

Methods for forming photoresists sensitive to radiation on substrate are provided. Atomic layer deposition methods of forming films (e. g. , silicon-containing films) photoresists are described. The process can be repeated multiple times to deposit a plurality of silicon photoresist layers. Process of depositing photoresist and forming patterns in photoresist are also disclosed which utilize carbon containing underlayers such as amorphous carbon layers.

US Patent:

20020160606, Oct 31, 2002

Filed:

Feb 14, 2002

Appl. No.:

10/076115

Inventors:

Kevin Siefering - Excelsior MN, US
Paul Deaton - San Jose CA, US

International Classification:

H01L021/302
H01L021/461

US Classification:

438/689000

Abstract:

A method for removing a material from a surface of an in-process, microelectronic substrate is provided. The method comprises providing a material-removing composition in the form of a liquid and flash vaporizing the liquid, thereby forming a material-removing vapor. The resulting vapor is then contacted with the material on the substrate. Preferred substrates include those used to make microelectronic articles such as semiconductor wafers and those used to make electric circuits, displays such as computer displays, optical storage media such as CD-ROM or DVD discs and other materials and products.

US Patent:

20050252449, Nov 17, 2005

Filed:

Apr 29, 2005

Appl. No.:

11/119388

Inventors:

Son Nguyen - San Jose CA, US
Kedarnath Sangam - Sunnyvale CA, US
Miriam Schwartz - Los Gatos CA, US
Kenric Choi - Santa Clara CA, US
Sanjay Bhat - Bangalore, IN
Pravin Narwankar - Sunnyvale CA, US
Shreyas Kher - Campbell CA, US
Rahul Sharangapani - Fremont CA, US
Shankar Muthukrishnan - San Jose CA, US
Paul Deaton - San Jose CA, US

International Classification:

C23C016/00

US Classification:

118715000, 427248100

Abstract:

The embodiments of the invention describe a process chamber, such as an ALD chamber, that has gas delivery conduits with gradually increasing diameters to reduce Joule-Thompson effect during gas delivery, a ring-shaped gas liner leveled with the substrate support to sustain gas temperature and to reduce gas flow to the substrate support backside, and a gas reservoir to allow controlled delivery of process gas. The gas conduits with gradually increasing diameters, the ring-shaped gas liner, and the gas reservoir help keep the gas temperature stable and reduce the creation of particles.

US Patent:

20130113085, May 9, 2013

Filed:

Nov 4, 2011

Appl. No.:

13/289657

Inventors:

Timothy Michaelson - Milpitas CA, US
Timothy W. Weidman - Sunnyvale CA, US
Paul Deaton - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/314
H01L 29/00

US Classification:

257632, 438785, 257E29001, 257E21266

Abstract:

Provided are low temperature methods of depositing hafnium or zirconium containing films using a Hf(BH)precursor, or Zr(BH)precursor, respectively, as well as a co-reactant. The co-reactant can be selected to obtain certain film compositions. Co-reactants comprising an oxidant can be used to deposit oxygen into the film. Accordingly, also provided are films comprising a metal, boron and oxygen, wherein the metal comprises hafnium where a Hf(BH)precursor is used, or zirconium, where a Zr(BH)precursor is used.

US Patent:

20130115778, May 9, 2013

Filed:

Aug 22, 2012

Appl. No.:

13/591915

Inventors:

Jun Xue - San Jose CA, US
Jie Liu - Sunnyvale CA, US
Yongmei Chen - San Jose CA, US
Timothy Michaelson - Milpitas CA, US
Paul Deaton - San Jose CA, US
Timothy W. Weidman - Sunnyvale CA, US
Christopher S. Ngai - Burlingame CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/311
H01L 21/3065

US Classification:

438703, 438710, 438694, 257E21218, 257E21252

Abstract:

Provided methods of etching and/or patterning films. Certain methods comprise exposing at least part of a film on a substrate, the film comprising one or more of HfO, HfBO, ZrO, ZrBO, to a plasma comprising BCland argon to etch away said at least part of the film. Certain other methods relate to patterning substrates using said methods of etching films.

Address:

870 Saratoga Ave APT F107, San Jose, CA 95129

Phone:

4088596497

VIN:

WMWSV3C50BTY22458

Make:

MINI

Model:

COOPER

Year:

2011