Kam S. Law - Union City CA Robert Robertson - Palo Alto CA Pamela Lou - San Francisco CA Marc Michael Kollrack - Alameda CA Angela Lee - Sunnyvale CA Dan Maydan - Los Altos Hills CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1600
US Classification:
42725518, 42725519, 42725527, 42725537, 427255394
Abstract:
Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0. 5 Torr and substrate temperatures of about 250-370Â C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.
Method For Depositing Amorphous Silicon Thin Films Onto Large Area Glass Substrates By Chemical Vapor Deposition At High Deposition Rates
Kam S. Law - Union City CA Robert Robertson - Palo Alto CA Pamela Lou - San Francisco CA Marc Michael Kollrack - Alameda CA Angela Lee - Sunnyvale CA Dan Maydan - Los Altos Hills CA
Amorphous silicon thin films can be deposited onto large area glass substrates at high deposition rates by chemical vapor deposition using pressure of at least 0. 8 Torr and temperatures of about 270-350Â C. and fairly high gas flow rates of silane in a hydrogen carrier gas. The spacing between the inlet gas manifold and the substrate in the CVD chamber is maintained so as to maximize the deposition rate. Improved transistor characteristics are observed when the substrate is either exposed to a hydrogen plasma for a few seconds prior to high rate deposition of the amorphous silicon, or when a first layer of amorphous silicon is deposited using a slow deposition rate process prior to deposition of the high deposition rate amorphous silicon.
Plasma Cvd Of Silicon Nitride Thin Films On Large Area Glass Substrates At High Deposition Rates
Kam S. Law - Union City CA Robert Robertson - Palo Alto CA Pamela Lou - San Francisco CA Marc M. Kollrack - Alameda CA Angela Lee - Sunnyvale CA Dan Maydan - Los Altos Hills CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B05D 306
US Classification:
427574
Abstract:
High quality silicon nitride thin films can be deposited by plasma CVD onto large area glass substrates at high deposition rates by adjusting the spacing between the gas inlet manifold and substrate, maintaining the temperature at about 300. degree. -350. degree. C. , and a pressure of at least 0. 8 Torr. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single vacuum system.