Nichole R Koontz

US Patent:

20060124593, Jun 15, 2006

Filed:

May 31, 2005

Appl. No.:

11/141162

Inventors:

Gert Moyaerts - Phoenix AZ, US
Ken Delbridge - Chandler AZ, US
Nichole Koontz - Mesa AZ, US
Saeed Mohseni - Sylvania OH, US
Gerome Sayles - Adrian MI, US
Deepak Mahulikar - Madison CT, US

International Classification:

C09K 3/14
C09G 1/02
C09K 13/00
H01L 21/461
B44C 1/22
H01L 21/302
C09C 1/68
C23F 1/00
B24D 3/02

US Classification:

216088000, 051307000, 051308000, 051309000, 106003000, 252079100, 216089000, 438692000

Abstract:

A composition for chemical mechanical polishing a surface of a substrate having a plurality of ultra high purity sol gel processed colloidal silica particles for chemical mechanical polishing having alkali metals Li, Na, K, Rb, Cs, Fr and a combination thereof, at a total alkali concentration of about 300 ppb or less, with the proviso that the concentration of Na, if present, is less than 200 ppb; and a medium for suspending the particles is provided. Also, provided are methods of chemical mechanical polishing which included a step of contacting a substrate and a composition according to the present invention. The contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.

US Patent:

20070254964, Nov 1, 2007

Filed:

Jun 15, 2007

Appl. No.:

11/818730

Inventors:

Deepak Mahulikar - Madison CT, US
Yuhu Wang - Santa Rosa CA, US
Ken Delbridge - Chandler AZ, US
Gert Moyaerts - Phoenix AZ, US
Saeed Mohseni - Sylvania OH, US
Nichole Koontz - Mesa AZ, US
Bin Hu - Chandler AZ, US
Liqing Wen - Mesa AZ, US

International Classification:

B01F 3/12
B08B 7/00

US Classification:

516081000, 134007000, 051308000, 516086000

Abstract:

An ultrapure colloidal silica dispersion comprising colloidal silica particles having a mean or aggregate particle size from about 10 to about 200 nm, wherein the colloidal silica dispersion has less than 200 ppb of each trace metal impurity disposed therein, excluding potassium and sodium, and have less than 2 ppm residual alcohol.

US Patent:

20120145950, Jun 14, 2012

Filed:

Feb 24, 2012

Appl. No.:

13/405027

Inventors:

Deepak Mahulikar - Madison CT, US
Yuhu Wang - Santa Rosa CA, US
Ken A. Delbridge - Chandler AZ, US
Gert R.M. Moyaerts - Phoenix AZ, US
Saeed H. Mohseni - Sylvania OH, US
Nichole R. Koontz - Mesa AZ, US
Bin Hu - Chandler AZ, US
Liqing Wen - Mesa AZ, US

International Classification:

C09K 13/00
B82Y 30/00

US Classification:

252 791, 977895

Abstract:

An ultrapure colloidal silica dispersion comprising colloidal silica particles having a mean or aggregate particle size from about 10 to about 200 nm, wherein the colloidal silica dispersion has less than 200 ppb, of each trace metal impurity disposed therein, excluding potassium and sodium, and have less than 2 ppm residual alcohol. A method for producing and using the same is also disclosed.

US Patent:

8211193, Jul 3, 2012

Filed:

Sep 22, 2006

Appl. No.:

11/526132

Inventors:

Deepak Mahulikar - Madison CT, US
Yuhu Wang - Santa Rosa CA, US
Ken A. Delbridge - Chandler AZ, US
Gert R. M. Moyaerts - Phoenix AZ, US
Saeed H. Mohseni - Sylvania OH, US
Nichole R. Koontz - Mesa AZ, US
Bin Hu - Chandler AZ, US
Liqing Wen - Mesa AZ, US

Assignee:

Fujifilm Planar Solutions, LLC - Adrian MI

International Classification:

B24D 3/02
C09C 1/68
C09K 3/14
C09K 13/00
C09K 13/02
B24B 1/00
C01B 33/12
C03C 15/00
C03C 25/68

US Classification:

51308, 451 57, 423335, 252 791, 252 795, 216 89

Abstract:

A method of chemical mechanical polishing a surface of a substrate including the step of: contacting the substrate and a composition including a plurality of colloidal silica particles having less than 200 ppb of each trace metal impurity, excluding potassium and sodium, have less than 2 ppm residual alcohol and wherein the cumulative concentration of the trace metal, excluding potassium and sodium, is in the range from about 0. 5 to about 5 ppm; and a medium for suspending the particles; wherein the composition is an ultrapure colloidal silica dispersion; and wherein the contacting is carried out at a temperature and for a period of time sufficient to planarize the substrate.