Nathan A Newman

US Patent:

6734454, May 11, 2004

Filed:

Aug 26, 2002

Appl. No.:

10/229354

Inventors:

Theodore Van Duzer - El Cerrito CA
Nathan Newman - Scottsdale AZ
Lei Yu - Tempe AZ
Anupama Bhat Kaul - Pasadena CA

Assignee:

The Regents of the University of California - Oakland CA
The Arizona Board of Regents - Tempe AR

International Classification:

H01L 2906

US Classification:

257 31, 257 34, 257 35, 365162, 505162, 505190, 505329

Abstract:

A Josephson junction has inherent resistance which effectively shunts the junction and thereby obviates a separate shunt resistor and thus reduces surface area in an integrated circuit including a plurality of Josephson junctions. The Josephson junction comprises a stacked array of layers of Nb and a superconductor with T 9Â K having a penetration depth greater than that of Nb, for example Nb Ti N, with a layer of a conducting material having a resistivity between 200 -cm, 1 -cm, such as Ta N in the stack. The Josephson junction can be formed on a supporting substrate such as silicon with a ground plane such as Nb on the substrate and an insulating layer such as SiO separating the ground plane from the stacked array.

US Patent:

56573359, Aug 12, 1997

Filed:

Nov 1, 1993

Appl. No.:

8/146502

Inventors:

Michael Rubin - Berkeley CA
Nathan Newman - Montara CA
Tracy Fu - Berkeley CA
Jennifer Ross - Pleasanton CA
James Chan - Berkeley CA

Assignee:

The Regents, University of California - Oakland CA

International Classification:

H01L 3300

US Classification:

372 44

Abstract:

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5. times. 10. sup. 11 /cm. sup. 3 and hole mobilities of about 500 cm. sup. 2 /V-sec, measured at 250. degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

US Patent:

61372315, Oct 24, 2000

Filed:

Sep 10, 1996

Appl. No.:

8/711844

Inventors:

Andre Anders - Albany CA
Simone Anders - Albany CA
Michael Dickinson - San Leandro CA
Michael Rubin - Berkeley CA
Nathan Newman - Winnetka IL

Assignee:

The Regents of the University of California - Oakland CA

International Classification:

H05H 124

US Classification:

31511121

Abstract:

A constricted glow discharge chamber and method are disclosed. The polarity and geometry of the constricted glow discharge plasma source is set so that the contamination and energy of the ions discharged from the source are minimized. The several sources can be mounted in parallel and in series to provide a sustained ultra low source of ions in a plasma with contamination below practical detection limits. The source is suitable for applying films of nitrides such as gallium nitride and oxides such as tungsten oxide and for enriching other substances in material surfaces such as oxygen and water vapor, which are difficult process as plasma in any known devices and methods. The source can also be used to assist the deposition of films such as metal films by providing low-energy ions such as argon ions.

Author:

Nathan Newman

ISBN #:

0271022043

Author:

Nathan Newman

ISBN #:

0271022051