Levi William Torrison

US Patent:

7374738, May 20, 2008

Filed:

Oct 10, 2002

Appl. No.:

10/492271

Inventors:

John Kouvetakis - Mesa AZ, US
Ignatius S. Tsong - Tempe AZ, US
Levi Torrison - Mesa AZ, US
John Tolle - Gilbert AZ, US

Assignee:

Arizona Board of Regents, acting for and on behalf of, Arizona State University - Tempe AZ

International Classification:

C01B 35/10
C01B 21/082
C01B 33/00

US Classification:

423277, 423325, 423326, 4233271, 423365

Abstract:

Novel superhard dielectric compounds useful as gate dielectrics discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula HX—O—XH, wherein X is silicon or carbon with a compound comprising boron or nitrogen in a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.

US Patent:

20090324475, Dec 31, 2009

Filed:

Jan 2, 2008

Appl. No.:

11/968546

Inventors:

John Kouvetakis - Mesa AZ, US
Levi Torrison - Mesa AZ, US
John Tolle - Gilbert AZ, US

International Classification:

C01B 35/10
C01B 33/26

US Classification:

423277, 4233271

Abstract:

Novel superhard dielectric compounds useful as gate dielectrics in microelectronic devices have been discovered. Low temperature methods for making thin films of the compounds on substrate silicon are provided. The methods comprise the step of contacting a precursor having the formula HX—O—XH, wherein X is silicon or carbon with a compound comprising boron or nitrogen In a chemical vapor deposition (CVD) chamber or with one or more atomic elements in a molecular beam epitaxial deposition (MBE) chamber. These thin film constructs are useful as components of microelectronic devices, and specifically as gate dielectrics in CMOS devices.