Laura C Prine

age ~66

from Mobile, AL

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Laura Prine Phones & Addresses

Semiconductors

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Location:

Mobile, AL

Industry:

Semiconductors

Work:

Mitsubishi Polysilicon America Corp
Production Director

Method For Producing Trichlorosilane With Reduced Boron Compound Impurities
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US Patent:

20120082609, Apr 5, 2012
Filed:

Oct 1, 2010
Appl. No.:

12/896116
Inventors:

Takeshi Kamei - Theodore AL, US
Laura Prine - Theodore AL, US
Takamasa Yasukawa - Yokkaichi-shi, JP
Yasuhiro Oda - Yokkaichi-shi, JP
Assignee:

MITSUBISHI MATERIALS CORPORATION - Tokyo
Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) - Theodore AL
International Classification:

C01B 33/107
US Classification:

423342
Abstract:

The present invention relates to a method for producing trichlorosilane having a reduced amount of boron compounds. The method including: (A) reacting metallurgical grade silicon with hydrogen chloride in a fluidized-bed reactor to produce a reaction gas including trichlorosilane; (B) first distilling the reaction gas, for separating first vapor fractions and first residue fractions, by setting a distillation temperature at a top of a distillation column between about a boiling point of trichlorosilane and about a boiling point of tetrachlorosilane and feeding the first vapor fractions to a second distillation column; (C) second distilling, for separating the trichlorosilane and second vapor fractions including boron compounds, by setting a distillation temperature at a top of the distillation column between about a boiling point of dichlorosilane and about a boiling point of trichlorosilane; and (D) feeding back the second vapor fractions to the fluidized-bed reactor.

Apparatus And Method For Producing Polycrystalline Silicon Having A Reduced Amount Of Boron Compounds By Forming Phosphorus-Boron Compounds
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US Patent:

20120177559, Jul 12, 2012
Filed:

Jan 7, 2011
Appl. No.:

12/986794
Inventors:

Laura Prine - Theodore AL, US
Richard M. Halstead - Spanish Fort AL, US
Michael W. Keevan - Theodore AL, US
Assignee:

Mitsubishi Materials Corporation - Tokyo
Mitsubishi Polycrystalline Silicon America Corporation (MIPSA) - Theodore AL
International Classification:

C01B 33/039
B01J 8/18
US Classification:

423349, 422139
Abstract:

The invention concerns an apparatus and a method for manufacturing polycrystalline silicon having a reduced amount of boron compounds. The invention provides an apparatus and a method which mix an unpurified trichlorosilane with purified hydrogen gas from an activated carbon tower. The mixture is sent to a distillation apparatus for purifying trichlorosilane.