Jordan A Katine

US Patent:

6680832, Jan 20, 2004

Filed:

May 11, 2001

Appl. No.:

09/853352

Inventors:

Kuok San Ho - Cupertino CA
Jordan A. Katine - San Jose CA
Jeffrey S. Lille - Sunnyvale CA
Ching H. Tsang - Sunnyvale CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11B 539

US Classification:

3603242, 360319

Abstract:

A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor or read head has a magnetic shield geometry that covers the side walls of the sensor structure to prevent side reading caused by magnetic flux entering from adjacent data tracks. The shield geometry includes a bottom shield with a substantially planar surface and a specially shaped top shield. The top shield has substantially vertical portions generally parallel to the side walls of the sensor structure, a horizontal top portion over the trackwidth region of the sensor, and horizontal side portions formed over the portions of the bottom shield on either side of the sensor structure. The insulating gap material that separates the bottom and top shields is in contact with the horizontal portions of the bottom shield and the side walls of the sensor structure.

US Patent:

6821715, Nov 23, 2004

Filed:

May 10, 2001

Appl. No.:

09/853345

Inventors:

Jordan A. Katine - San Jose CA
Jennifer Liu - San Jose CA
Scott A. MacDonald - San Jose CA
Michael J. Rooks - Briarcliff Manor NY
Hugo Alberto Emilio Santini - San Jose CA

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11B 539

US Classification:

430320, 430314, 430319, 430296, 2960307, 2960318

Abstract:

A suspended resist bridge suitable for lithographically patterning MR sensors having trackwidths narrower than 0. 2 micron is fabricated using the method of the present invention. First, PMGI is spun onto a substrate to form a first thin resist layer. Next, PMMA is spun onto the first resist layer to form a second resist layer. The PMMA layer is exposed to an electron beam to pattern the trackwidth of the MR sensors. E-beam exposed PMMA is then developed in an IPA solution. The resist structure is then placed in a basic solution for dissolving PMGI, which results in a fully undercut resist bridge that is used for patterning the MR sensors.

US Patent:

7160477, Jan 9, 2007

Filed:

Jan 26, 2005

Appl. No.:

11/044288

Inventors:

Zvonimir Z. Bandic - San Jose CA, US
A. David Erpelding - San Jose CA, US
Jordan Asher Katine - San Jose CA, US
Quang Le - San Jose CA, US
Kim Y. Lee - Fremont CA, US
Jui-Lung Li - San Jose CA, US
Michael J. Rooks - Briarcliff Manor NY, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

B44C 1/22

US Classification:

216 22, 216 88, 438692, 438740, 2960306, 2960307

Abstract:

A contact magnetic transfer (CMT) master template is made by first adhering a plastic film to a first surface of a silicon wafer. A resist pattern is then formed on the polyimide film and the polyimide is reactive-ion-etched through the resist to form recesses. The resist is removed and a chemical-mechanical-polishing (CMP) stop layer is deposited over the non-recessed regions of the polyimide, and optionally into the bottoms of the recesses. A layer of magnetic material is then deposited over the polyimide film to fill the recesses. A CMP process is then performed to remove magnetic material above the recesses and above the non-recessed regions and continued until the CMP stop layer is reached. The resulting upper surface of the polyimide film is then a continuous planar film of magnetic islands and regions of CMP stop layer material that function as the nonmagnetic regions of the template.

US Patent:

7291279, Nov 6, 2007

Filed:

Apr 30, 2004

Appl. No.:

10/835807

Inventors:

Frederick Hayes Dill - South Salem NY, US
Meng Ding - Mountain View CA, US
Kuok San Ho - Santa Clara CA, US
Jordan Asher Katine - San Jose CA, US
Scott Arthur MacDonald - San Jose CA, US
Huey-Ming Tzeng - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

B44C 1/22
H01L 21/00
G11B 5/33
G11B 5/127

US Classification:

216 22, 438 3, 360323

Abstract:

A method of making a read sensor while protecting it from electrostatic discharge (ESD) damage involves forming a severable shunt during the formation of the read sensor. The method may include forming a resist layer over a plurality of read sensor layers; performing lithography with use of a mask to form the resist layer into a patterned resist which exposes left and right side regions over the read sensor layers as well as a shunt region; etching, with the patterned resist in place, to remove materials in the left and right side regions and in the shunt region; and depositing, with the patterned resist in place, left and right hard bias and lead layers in the left and right side regions, respectively, and in the shunt region for forming a severable shunt which electrically couples the left and right hard bias and lead layers together for ESD protection.

US Patent:

7572499, Aug 11, 2009

Filed:

Jan 26, 2005

Appl. No.:

11/044777

Inventors:

Zvonimir Z. Bandic - San Jose CA, US
A. David Erpelding - San Jose CA, US
Jordan Asher Katine - San Jose CA, US
Quang Le - San Jose CA, US
Kim Y. Lee - Fremont CA, US
Jui-Lung Li - San Jose CA, US
Michael J. Rooks - Briarcliff Manor NY, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/64
G11B 5/66
G11B 5/65
G11B 5/86

US Classification:

428172, 428826, 428831, 428832, 4288324, 4288357, 360 15, 360 16, 360 17

Abstract:

A contact magnetic transfer (CMT) master template has a flexible plastic film with a planarized top or upper surface containing magnetic islands separated from one another by nonmagnetic regions. The flexible plastic film is secured at its perimeter to a silicon annulus that provides rigid support at the perimeter of the film. The plastic film is preferably polyimide that has recesses filled with the magnetic material that form the pattern of magnetic islands. The upper surfaces of the islands and the upper surfaces of the nonmagnetic regions form a continuous planar surface. The nonmagnetic regions are formed of chemical-mechanical-polishing (CMP) stop layer material that remains after a CMP process has planarized the upper surface of the plastic film.

US Patent:

7646570, Jan 12, 2010

Filed:

Jul 31, 2006

Appl. No.:

11/496604

Inventors:

Hardayal Singh Gill - Palo Alto CA, US
Jordan Asher Katine - Mountain View CA, US
Alexander Zeltser - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/39
H04R 31/00

US Classification:

3603242, 2960315, 2960318

Abstract:

Current-perpendicular-to-plane (CPP) read sensors having constrained current paths made of lithographically-defined conductive vias with surrounding oxidized metal sublayers, and methods of making the same, are disclosed. In one illustrative example, at least part of a sensor stack structure which includes an electrically conductive spacer layer is formed. A metal (e. g. Ta) sublayer is then deposited over and adjacent the spacer layer, followed by one of an oxidation process, a nitridation process, and an oxynitridation process, to produce an insulator (e. g. TaOx) from the metal sublayer. The metal sublayer deposition and oxidation/nitridation/oxynitridation processes are repeated as necessary to form the insulator with a suitable thickness. Next, a resist structure which exposes one or more portions of the insulator is formed over the insulator. With the resist structure in place, exposed insulator materials are removed by etching to form one or more apertures through the insulator down to the spacer layer.

US Patent:

7765675, Aug 3, 2010

Filed:

Sep 1, 2005

Appl. No.:

11/219108

Inventors:

Jeffrey Robinson Childress - San Jose CA, US
Jordan Asher Katine - San Jose CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam

International Classification:

G11B 5/187
B44C 1/22

US Classification:

2960307, 2960312, 216 94, 360314, 360322

Abstract:

Current-perpendicular-to-plane (CPP) read sensors for magnetic heads having constrained current paths made of lithographically-defined conductive vias, and methods of making the same, are disclosed. In one example, a sensor stack structure which includes an electrically conductive spacer layer is formed over a first shield layer. An insulator layer is deposited over and adjacent the spacer layer, and a resist structure which exposes one or more portions of the insulator layer is formed over the insulator layer. With the resist structure in place, the exposed insulator layer portions are removed by etching to form one or more apertures through the insulator layer down to the spacer layer. Electrically conductive materials are subsequently deposited within the one or more apertures to form one or more lithographically-defined conductive vias of a current-constraining structure.

US Patent:

7821822, Oct 26, 2010

Filed:

Aug 14, 2008

Appl. No.:

12/191956

Inventors:

Jordan A. Katine - Mountain View CA, US
Ching Hwa Tsang - Sunnyvale CA, US
Barry Stipe - San Jose CA, US
Bruce D. Terris - Sunnyvale CA, US

Assignee:

Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam

International Classification:

G11C 11/15

US Classification:

365173, 365130, 365157, 365158, 365171

Abstract:

Read/write elements for three-dimensional magnetic memories are disclosed. One embodiment describes an array of integrated read/write elements. The array includes read conductors formed proximate to one of the layers (i. e. , storage stacks) of the three-dimensional magnetic memory. The array also includes flux caps formed proximate to the read conductors, and read sensors formed proximate to the flux caps. The array also includes a magnetic pole having a first end contacting the read sensor and a second end opposite the first end. First write conductors are fabricated between the magnetic poles, and second write conductors are also fabricated between the magnetic poles orthogonal to the first write conductors. The first write conductors and the second write conductors form current loops around the magnetic poles.