Jonathan L Rullan

US Patent:

7776740, Aug 17, 2010

Filed:

Jan 22, 2008

Appl. No.:

12/018074

Inventors:

Kenji Suzuki - Guiderland NY, US
Miho Jomen - Watervliet NY, US
Jonathan Rullan - Albany NY, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L 21/44

US Classification:

438674, 438686, 257E21121

Abstract:

A method for integrating low-temperature selective Ru metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. The method includes providing a patterned substrate containing a recessed feature in a dielectric layer, where the recessed feature is at least substantially filled with planarized bulk Cu metal, heat-treating the bulk Cu metal and the dielectric layer in the presence of H, N, or NH, or a combination thereof, and selectively depositing a Ru metal film on the heat-treated planarized bulk Cu metal.

US Patent:

7884012, Feb 8, 2011

Filed:

Sep 28, 2007

Appl. No.:

11/864566

Inventors:

Kenji Suzuki - Guilderland NY, US
Tadahiro Ishizaka - Watervliet NY, US
Miho Jomen - Watervliet NY, US
Jonathan Rullan - Albany NY, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

H01L 21/4763

US Classification:

438637, 438627, 438643, 438650, 438660, 257E21082, 257E21577, 257E21584, 257E21586

Abstract:

A method is provided for void-free copper (Cu) filling of recessed features in a semiconductor device. The method includes providing a patterned substrate containing a recessed feature, depositing a barrier film on the patterned substrate, including in the recessed feature, depositing a Ru metal film on the barrier film, and depositing a discontinuous Cu seed layer on the Ru metal film, where the Cu seed layer partially covers the Ru metal film in the recessed feature. The method further includes exposing the substrate to an oxidation source gas that oxidizes the Cu seed layer and the portion of the Ru metal film not covered by the Cu seed layer, heat-treating the oxidized Cu seed layer and the oxidized Ru metal film under high vacuum conditions or in the presence of an inert gas to activate the oxidized Ru metal film for Cu plating, and filling the recessed feature with bulk Cu metal. The exposure to the oxidation source gas can be an air exposure commonly encountered in semiconductor device manufacturing prior to Cu plating.

US Patent:

20130252417, Sep 26, 2013

Filed:

Sep 14, 2012

Appl. No.:

13/619083

Inventors:

Tadahiro ISHIZAKA - Nirasaki City, JP
Jonathan Rullan - Albany NY, US
Osamu Yokoyama - Nirasaki City, JP
Atsushi Gomi - Nirasaki City, JP
Chiaki Yasumuro - Nirasaki City, JP
Takara Kato - Nirasaki City, JP
Tatsuo Hatano - Nirasaki City, JP
Hiroaki Kawasaki - Nirasaki City, JP

Assignee:

TOKYO ELECTRON LIMITED - Tokyo

International Classification:

H01L 21/768

US Classification:

438643

Abstract:

A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon.

US Patent:

6768111, Jul 27, 2004

Filed:

Sep 16, 2003

Appl. No.:

10/663552

Inventors:

Oliver C. Wells - Yorktown Heights NY
Lynne M. Gignac - Beacon NY
Jonathan L. Rullan - Albany NY
Conal E. Murray - Yorktown Heights NY

Assignee:

International Business Machines Corp. - Armonk NY

International Classification:

G01N 2300

US Classification:

250307, 250311

Abstract:

A method of measurement of topographic features on a surface of a substrate is presented, wherein a focused beam of particles falls onto the surface of the substrate, and backscattered particles are detected with a particle detector. An opaque material is interposed between the surface and the detector, and the position of the shadow of an edge of the opaque material on the detector is recorded. The relative position of the edge and the surface of the substrate is then determined, and the topography of the surface determined as the particle beam and the substrate are moved with respect to one another.