John Ray Beall

US Patent:

8564968, Oct 22, 2013

Filed:

May 10, 2011

Appl. No.:

13/104770

Inventors:

Youngwook Heo - Dallas TX, US
John M. Beall - Richardson TX, US

Assignee:

TriQuint Semiconductor, Inc. - Hillsboro OR

International Classification:

H05K 7/10
H05K 7/00
H05K 7/12
H05K 1/11

US Classification:

361767, 361760, 361768, 361777, 361770, 361804

Abstract:

Embodiments include but are not limited to apparatuses and systems including a die package including a substrate, a die coupled with a top surface of the substrate, a package wall disposed on the top surface of the substrate and bounding the die, and a package lid coupled with the package wall, and including at least one protrusion facilitating a coupling of the package lid with the package wall. At least one edge of the top surface of the die pad may include an etched portion such that a width of the top surface is narrower than a width of the bottom surface. At least one edge of a top surface of at least one of the leads may include an etched portion such that a width of the top surface is narrower than a width of the bottom surface. Other embodiments may be described and claimed.

US Patent:

50558897, Oct 8, 1991

Filed:

Oct 31, 1989

Appl. No.:

7/429924

Inventors:

John M. Beall - Dallas TX

Assignee:

Knauf Fiber Glass, GmbH - Shelbeyville IN

International Classification:

H01L 2992

US Classification:

357 14

Abstract:

A lateral varactor is fabricated with a recess structure that provides staggered punch-through points, enabling the varactor to be tuned through punch-through without significant non-linearities in either capacitance or Q. The lateral varactor (30) includes a cathode (32) and an anode (40) disposed on the surface of an active layer (12). The anode (40) includes a surface section (45), and a recess section (46) disposed within a recess area (50). This recess structure results in a greater active layer depth under the anode surface section (45) than under the anode recess section (46). As a result, as reverse-bias voltage on the anode increases, the depletion region (60) reaches punch-through under the anode recess section (46) prior to reaching punch-through under the anode surface section (45). As a result, varactor capacitance depends upon the contributions associated with each anode section and sidewall capacitance, so that the abrupt impedance changes caused by tuning the varactor through a punch-through point is reduced, and varactor tuning is made more continuous.

Author:

John W. Beall

ISBN #:

0873674553