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Jeramy D Zimmerman

age ~43

from Golden, CO

Also known as:
  • Jeramy David Zimmerman
  • Jeramy Zimmerman

Jeramy Zimmerman Phones & Addresses

  • Golden, CO
  • Ann Arbor, MI
  • Santa Barbara, CA
  • Fort Collins, CO

Us Patents

  • Polymer Wrapped Carbon Nanotube Near-Infrared Photoactive Devices

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  • US Patent:
    8017863, Sep 13, 2011
  • Filed:
    Apr 7, 2009
  • Appl. No.:
    12/419846
  • Inventors:
    Stephen R. Forrest - Ann Arbor MI, US
    Michael S. Arnold - Madison WI, US
    Jeramy D. Zimmerman - Ann Arbor MI, US
    Richard Lunt - Ann Arbor MI, US
  • Assignee:
    The Regents of the University of Michigan - Ann Arbor MI
  • International Classification:
    H01L 31/00
  • US Classification:
    136263
  • Abstract:
    A photoactive device includes a photoactive region disposed between and electrically connected to two electrodes where the photoactive region includes a first organic photoactive layer comprising a first donor material and a second organic photoactive layer comprising a first acceptor material. The first donor material contains photoactive polymer-wrapped carbon nanotubes and the photoactive region includes one or more additional organic photoactive material layers disposed between the first donor material layer and the acceptor material layer. The photoactive region creates excitons upon absorption of light in the range of about 400 nm to 1450 nm.
  • Methods Of Preparing Flexible Photovoltaic Devices Using Epitaxial Liftoff, And Preserving The Integrity Of Growth Substrates Used In Epitaxial Growth

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  • US Patent:
    8378385, Feb 19, 2013
  • Filed:
    Sep 9, 2010
  • Appl. No.:
    12/878261
  • Inventors:
    Stephen R. Forrest - Ann Arbor MI, US
    Jeramy Zimmerman - Ann Arbor MI, US
    Kyusang Lee - Ann Arbor MI, US
  • Assignee:
    The Regents of the University of Michigan - Ann Arbor MI
  • International Classification:
    H01L 29/06
    H01L 21/302
    H01L 31/0352
  • US Classification:
    257190, 257614, 257 80, 257E21124, 257E31032, 438749, 438703, 438 94
  • Abstract:
    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.
  • Enhanced Tunnel Junction For Improved Performance In Cascaded Solar Cells

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  • US Patent:
    20070227588, Oct 4, 2007
  • Filed:
    Feb 15, 2007
  • Appl. No.:
    11/675269
  • Inventors:
    Arthur Gossard - Santa Barbara CA, US
    Joshua Zide - Goleta CA, US
    Jeramy Zimmerman - Santa Barbara CA, US
  • Assignee:
    THE REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
  • International Classification:
    H01L 31/00
  • US Classification:
    136255000
  • Abstract:
    A method and device that incorporates metallic nanoparticles at the p-n tunnel junction in a cascaded photovoltaic solar cell. The use of the nanoparticles enhances the tunneling current density through the tunnel junction. As such, the efficiency of the solar cell is increased. A method in accordance with the present invention comprises making a first solar cell having a first bandgap, making a tunnel junction coupled to the first solar cell, and making a second solar cell having a second bandgap, coupled to the tunnel junction opposite the first solar cell, wherein the tunnel junction comprises nanoparticles. Such a method further optionally includes the nanoparticles being a metal or a semi metal, specifically a semi-metal of erbium arsenide, the nanoparticles being deposited in an island structure within the tunnel junction, and the first solar cell being deposited on a flexible substrate. A device in accordance with the present invention comprises a tunnel junction, wherein the tunnel junction comprises nanoparticles between the n+ layer and the p+ layer of the tunnel junction. Such a device further optionally includes the device being a cascaded solar cell, the nanoparticles are a metal or semi-metal, specifically a semi-metal of erbium arsenide, and the device is fabricated on a flexible substrate.
  • Polymer Wrapped Carbon Nanotube Near-Infrared Photovoltaic Devices

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  • US Patent:
    20100065829, Mar 18, 2010
  • Filed:
    Jan 9, 2009
  • Appl. No.:
    12/351378
  • Inventors:
    Stephen R. Forrest - Ann Arbor MI, US
    Michael S. Arnold - Ann Arbor MI, US
    Jeramy D. Zimmerman - Ann Arbor MI, US
  • Assignee:
    The Regents of the University of Michigan - Ann Arbor MI
  • International Classification:
    H01L 51/42
  • US Classification:
    257 40, 977742, 257E51014
  • Abstract:
    A photovoltaic device includes a photoactive region disposed between and electrically connected to two electrodes where the photoactive region includes photoactive polymer-wrapped carbon nanotubes that create excitons upon absorption of light in the range of about 400 nm to 1400 nm.
  • Visible/Near-Infrared Porphyrin-Tape/C60 Organicphotodetectors

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  • US Patent:
    20110168984, Jul 14, 2011
  • Filed:
    Aug 25, 2010
  • Appl. No.:
    12/868503
  • Inventors:
    Stephen R. Forrest - Ann Arbor MI, US
    Jeramy D. Zimmerman - Ann Arbor MI, US
    Mark E. Thompson - Anaheim Hills CA, US
    Viacheslav Diev - Los Angeles CA, US
    Kenneth Hanson - Carrboro NC, US
  • Assignee:
    The Regents of the University of Michigan - Ann Arbor MI
    The University of Southern California - Los Angeles CA
  • International Classification:
    H01L 51/46
    C07D 487/22
  • US Classification:
    257 40, 540145, 534 11, 534 14, 534 15, 257E51043
  • Abstract:
    Porphyrin compounds are provided. The compounds may further comprise a fused polycyclic aromatic hydrocarbon or a fused heterocyclic aromatic. Fused polycyclic aromatic hydrocarbon s and fused heterocyclic aromatics may extend and broaden absorption, and modify the solubility, crystallinity, and film-forming properties of the porphyrin compounds. Additionally, devices comprising porphyrin compounds are also provided. The porphyrin compounds may be used in a donor/acceptor configuration with compounds, such as C.
  • Purification Of Carbon Nanotubes Using Agarose Column And Density Gradient Ultracentrifugation

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  • US Patent:
    20120177560, Jul 12, 2012
  • Filed:
    Jun 3, 2011
  • Appl. No.:
    13/153382
  • Inventors:
    Stephen R. Forrest - Ann Arbor MI, US
    Jeramy D. Zimmerman - Ann Arbor MI, US
  • Assignee:
    THE REGENTS OF THE UNIVERSITY OF MICHIGAN - Ann Arbor
  • International Classification:
    D01F 9/12
    B82Y 40/00
    B82Y 30/00
  • US Classification:
    4234471, 23293 R, 977742, 977845
  • Abstract:
    A method of processing bundles of carbon nanotubes (CNTs). Bundles of CNTs are put into a solution and unbundled using sonication and one or more surfactants that break apart and disperse at least some of the bundles into the solution such that it contains individual semiconducting CNTs, individual metallic CNTs, and remaining CNT bundles. The individual CNTs are separated from each other using agarose bead column separation using sodium dodecyl sulfate as a surfactant. Remaining CNT bundles are then separated out by performing density-gradient ultracentrifugation.
  • Non-Planar Inorganic Optoelectronic Devices

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  • US Patent:
    20130001731, Jan 3, 2013
  • Filed:
    Jun 28, 2012
  • Appl. No.:
    13/536003
  • Inventors:
    Stephen Forrest - Ann Arbor MI, US
    Jeramy D. Zimmerman - Ann Arbor MI, US
    Xin Xu - West Windsor NJ, US
    Christopher Kyle Renshaw - Ann Arbor MI, US
  • Assignee:
    THE REGENTS OF THE UNIVERSITY OF MICHIGAN - Ann Arbor MI
  • International Classification:
    H01L 31/18
    H01L 27/144
  • US Classification:
    257443, 438 64, 257E3111, 257E27128
  • Abstract:
    A method of fabricating an optoelectronic device includes creating an optoelectronic structure on a first substrate. The optoelectronic structure includes a release layer and a plurality of inorganic semiconductor layers supported by the release layer. The plurality of inorganic semiconductor layers is configured to be active in operation of the optoelectronic device. The plurality of inorganic semiconductor layers are permanently attached to a second substrate, which is flexible. The plurality of inorganic semiconductor layers are released from the first substrate after the attaching step, and the second substrate is deformed to a non-planar configuration.
  • Sacrificial Etch Protection Layers For Reuse Of Wafers After Epitaxial Lift Off

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  • US Patent:
    20130043214, Feb 21, 2013
  • Filed:
    Jun 28, 2012
  • Appl. No.:
    13/536267
  • Inventors:
    Stephen R. Forrest - Ann Arbor MI, US
    Jeramy Zimmerman - Ann Arbor MI, US
    Kyusang Lee - Ann Arbor MI, US
  • International Classification:
    B32B 15/04
    B44C 1/22
  • US Classification:
    216 95, 428457
  • Abstract:
    There is disclosed a growth structure comprising a growth substrate, a sacrificial layer, a buffer layer, at least three substrate protective layers, at least one epilayer, at least one contact, and a metal or alloy-coated host substrate. In one embodiment, the device further comprises at least three device structure protecting layers. The sacrificial layer may be positioned between the growth substrate and the at least one epilayer, wherein the at least three substrate protective layers are positioned between the growth substrate and the sacrificial layer, and the at least three device structure protecting layers are positioned between the sacrificial layer and the epilayer. There is also disclosed a method of preserving the integrity of a growth substrate by releasing the cell structure by etching the sacrificial layer and the protective layers.

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Jeramy Zimmerman

Work:
University of Michigan

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