Jean R Vatus

Author:

Jean Vatus

ISBN #:

2950577008

US Patent:

6876442, Apr 5, 2005

Filed:

Feb 13, 2002

Appl. No.:

10/078071

Inventors:

Jean R. Vatus - San Jose CA, US
David K. Carlson - Santa Clara CA, US
Arkadii V. Samoilov - Sunnyvale CA, US
Lance A. Scudder - Santa Clara CA, US
Paul B. Comita - Menlo Park CA, US
Annie A. Karpati - Cupertino CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01J005/48
G01R031/26

US Classification:

356 43, 438 7, 438 16

Abstract:

A method is provided wherein a temperature reading error of a pyrometer is avoided. An upper pyrometer is used to detect infrared radiation from a test layer formed on a test substrate under standard processing conditions. The infrared radiation from the test layer has a period having a length which is indicative of growth rate of the layer. The period is generally inversely proportional to the growth rate. The growth rate is directly related to the temperature.

US Patent:

7651948, Jan 26, 2010

Filed:

Jun 30, 2006

Appl. No.:

11/480134

Inventors:

Yihwan Kim - Milpitas CA, US
Jean R. Vatus - San Jose CA, US
Lori D. Washington - Union City CA, US
Arkadii Samoilov - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/302

US Classification:

438714, 438706, 438715, 438716, 134 12

Abstract:

A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.

US Patent:

7964038, Jun 21, 2011

Filed:

Oct 2, 2008

Appl. No.:

12/244604

Inventors:

Kailash Kiran Patalay - Santa Clara CA, US
Jean R. Vatus - San Jose CA, US
Dean Berlin - College Park MD, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00

US Classification:

118728, 257E2306, 118729, 118730

Abstract:

Methods and apparatus for providing an improved azimuthal thermal uniformity of a substrate are provided herein. In some embodiments, a substrate support for use in a semiconductor process chamber includes a susceptor plate; and a supporting member to support a backside of the susceptor plate proximate an outer edge thereof, wherein the supporting member substantially covers the backside of the susceptor plate. In some embodiments, the substrate support is disposed in a process chamber having at least some lamps disposed below the supporting member and utilized for heating the back side of the susceptor plate.

US Patent:

8398777, Mar 19, 2013

Filed:

Sep 26, 2008

Appl. No.:

12/238921

Inventors:

Richard O. Collins - Santa Clara CA, US
Kailash Kiran Patalay - Santa Clara CA, US
Jean R. Vatus - San Jose CA, US
Zhepeng Cong - Vancouver WA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00
C23C 16/50
C23F 1/00
H01L 21/306

US Classification:

118729, 118715, 118728, 1563451, 15634551, 15634554

Abstract:

A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal.

US Patent:

8418982, Apr 16, 2013

Filed:

Apr 20, 2009

Appl. No.:

12/426853

Inventors:

Jean Rene Vatus - San Jose CA, US

International Classification:

F16M 11/38

US Classification:

248431, 2481881, 2481887, 2481888, 2481631, 24818891, 248440, 10815812

Abstract:

A self supporting structure which may be used to support a platform such as a table top utilizes a plurality of elongated members and a ring. Each elongated member has one end resting on the floor on one point of a circumference, and the other end supporting the platform above the floor on a point substantially diametrically opposed. The elongated members cross each other proximate the center of the structure in a frictional and locking engagement maintained by the ring. That zone of convergence and the engagement of the elongated members between each other provide the only support for the structure which is self-supporting without extraneous means such as screw, glue or the like. The structure leave the floor below the edges and corners of the table top it supports free from interference with the legs of people seated at the table.

US Patent:

8441640, May 14, 2013

Filed:

Sep 26, 2008

Appl. No.:

12/238987

Inventors:

Kailash Kiran Patalay - Santa Clara CA, US
Richard O. Collins - Santa Clara CA, US
Jean R. Vatus - San Jose CA, US
Zhepeng Cong - Vancouver WA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

G01B 11/00
C23F 1/00

US Classification:

356399, 3561391, 117203, 216 60

Abstract:

A substrate processing system includes an optical measurement assembly coupled to an exterior of a processing chamber that has a portion that is transparent. The processing chamber includes a reference object and a pedestal for supporting a work piece. The optical measurement assembly measures a lateral location, a height and a tilt of the pedestal by transmitting light into the processing chamber through the transparent portion of the processing chamber and detecting a reflected light from both the reference object and the portion of the pedestal after the reflected light leaves the chamber through the transparent portion of the processing chamber. A method of adjusting a pedestal includes analyzing the reflected light and leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal in response to the analyzed reflected light.

US Patent:

8512472, Aug 20, 2013

Filed:

Nov 13, 2008

Appl. No.:

12/270590

Inventors:

Jean R. Vatus - San Jose CA, US
Kailash Kiran Patalay - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/00

US Classification:

118715, 118724, 118725, 15634533, 15634534

Abstract:

Methods and apparatus for controlling temperature and flow characteristics of process gases in a process chamber have been provided herein. In some embodiments, an apparatus for controlling temperature and flow characteristics of a process gas in a process chamber may include a gas pre-heat ring configured to be disposed about a substrate and having a labyrinthine conduit disposed therein, wherein the labyrinthine conduit has an inlet and outlet to facilitate the flow of the process gas therethrough.

US Patent:

20040175893, Sep 9, 2004

Filed:

Mar 7, 2003

Appl. No.:

10/384256

Inventors:

Jean Vatus - San Jose CA, US
Lance Scudder - Santa Clara CA, US
Paul Comita - Menlo Park CA, US

Assignee:

Applied Materials, Inc.

International Classification:

H01L021/336

US Classification:

438/300000

Abstract:

A method of making a substantially facet-free epitaxial film is disclosed. A substrate having predetermined regions is first provided. An epitaxial film forming process gas and a carrier gas are introduced into a reactor chamber. The epitaxial film forming process gas and the carrier have a flow ratio between 1:1 and 1:200. The epitaxial film is deposited into the predetermined regions of the substrate wherein the substrate has a temperature between about 350 C. and about 900 C. when the epitaxial film is being deposited.