James A Licari

Author:

James J. Licari

ISBN #:

0070377154

Author:

James J. Licari

ISBN #:

0815511523

Author:

James J. Licari

ISBN #:

0815514239

Author:

James J. Licari

ISBN #:

0815514921

Author:

James J. Licari

ISBN #:

0898741076

US Patent:

56062648, Feb 25, 1997

Filed:

Apr 21, 1995

Appl. No.:

8/426044

Inventors:

James J. Licari - Whittier CA
Aram Tanielian - Rancho Palos Verdes CA

International Classification:

H01C 1300

US Classification:

324763

Abstract:

Seepage of water and other impurities into hermetically sealed on plastic encapsulated modules leads to eventual device failure, as conductor material corrodes and opens, or electromigrates to establish conductive trails across a substrate, shorting the conductors. To forewarn of such failure, a sensing device defined as a separate chip is packaged in the same module with the circuit to be checked, with pinouts that can be tested with a circuit that is usually external. The sensor makes use of the moisture-induced migratory behavior that causes the problem, using a highly migratory metal or alloy to define paired electrodes spaced as closely as 2 micrometers apart. The metal of the electrodes undergoes rapid ionization and migration in the presence of trace amounts of moisture, dissolved ionic contaminants, and a small potential difference across the electrodes. Two volts applied to the sensor conductors by the sensor circuit will output a voltage if even a minute current is flowing between the electrodes permitting "go/no-go" decisions to be made regarding use of the module. The moisture which actuates the sensor, triggers the circuit long before the level of seepage and electromigratic represents present danger of circuit failure, and long before other types of sensors would indicate the existence of a problem.

US Patent:

54850380, Jan 16, 1996

Filed:

Sep 12, 1994

Appl. No.:

8/305492

Inventors:

James J. Licari - Whittier CA
Deborah J. Smith - Fountain Valley CA

Assignee:

Hughes Aircraft Company - Los Angeles CA

International Classification:

H01L 2348

US Classification:

257758

Abstract:

A High-Density-Multi-Chip (HDMI) substrate structure (10) includes alternating conductor metallization (24,28,36,54,56) and insulating dielectric layers (14,38). The dielectric layers (14,38) are formed by curtain coating of ultraviolet photoimageable epoxy material, and the metallization (24,28,36,54,56) is formed by electroless plating or sputtering of copper. The dielectric layers (14,38) are photoimaged and developed to form via holes (16,40,44), and vias (18,42,46) are formed in the holes (16,40,44) by electroless copper plating. The metallization (24,28,36,54,56) can be formed in the same manner as the dielectric layers (14,38), or can alternatively be formed by subtractive photolithography using photoresist masks.

US Patent:

39832708, Sep 28, 1976

Filed:

Oct 26, 1973

Appl. No.:

5/409848

Inventors:

James J. Licari - Whittier CA
Robert Willing - Anaheim CA

Assignee:

Rockwell International Corporation - El Segundo CA

International Classification:

C23C 110

US Classification:

427372

Abstract:

A composition for forming a boundary lubricant for metal and ceramic wear surfaces consisting of transition element complexes, including those of the higher molecular weight carboxylic acids such as the long chain fatty acids (C. sub. x H. sub. 2x. sub. +1 COOH; x = 8, 9, 10,. . . 29). The transition elements used here are metals such as Cr, Mn, Fe, Co, Ni or Al that can form coordination complexes. Exemplary metal complexes are chromium stearate and chromium behenate. An exemplary complex may be prepared by (1) reducing chromium trioxide by a reducing alcohol in a low molecular weight organic acid to produce chromium acetate; then 2 hydrating and olating the chromium acetate. A solution containing a maximum concentration of about 11 weight percent of the transition metal complex in a solvent such as trichloroethylene is applied as a thin layer onto a wear surface, then the layer is heated for 1-4 hours at a temperature at or above 70. degree. C and, within the approximate range 70. degree. -160. degree. C.

US Patent:

40863751, Apr 25, 1978

Filed:

Nov 7, 1975

Appl. No.:

5/629736

Inventors:

Theodore J. LaChapelle - Orange CA
John R. Davis - Costa Mesa CA
James J. Licari - Whittier CA

Assignee:

Rockwell International Corporation - El Segundo CA

International Classification:

B05D 512
H01L 2100

US Classification:

427 90

Abstract:

A monometallic batch process for forming beam leads of a preferred metal such as aluminum or gold. The process is applied to a wafer of finished microelectronic devices already having metal contact pads of the same preferred metal. Where aluminum is the desired metal, high deposition rates are used to minimize aluminum oxide contamination. High yield is achieved by forming the beam leads to have an elevated cantilevered configuration, by deep scribing of the wafer and, when desired, by providing an energy absorbing cushion to reduce the effect of collisions between chip edges and beam leads.