Himanshu Ajit Choksi

US Patent:

6477243, Nov 5, 2002

Filed:

Apr 29, 1998

Appl. No.:

09/069675

Inventors:

Himanshu Choksi - Fremont CA
Siva V. Kumar - Redwood City CA

Assignee:

Openwave Systems Inc. - Redwood City CA

International Classification:

H04M 1100

US Classification:

37910006, 37910008, 379 9324, 358440

Abstract:

Integration of telecommunication message services and other communication services is achieved by notifying a user of a communication system of successful receipt of a message (e. g. , a facsimile message) by sending a confirmation message to the user, e. g. , using e-mail, facsimile, voice and/or data communications. The user may be identified by a unique identifier, e. g. , a telephone number. The confirmation message may comprise a facsimile message, an attachment which includes the received message or a computer network address of a location where information regarding the received message and/or the message itself may be accessed. For the latter case, the computer network address is preferably a universal resource locator (URL) associated with a web page at which the information and/or received message may be accessed. The information may allow the user to view the message (e. g. , as marked up by the intended recipient thereof), and/or it may indicate whether the intended recipient has read, reviewed, down-loaded to a hard copy or other device or otherwise accessed the message.

US Patent:

62404458, May 29, 2001

Filed:

Apr 24, 1998

Appl. No.:

9/066268

Inventors:

Siva V. Kumar - Redwood City CA
Himanshu Choksi - Fremont CA

Assignee:

Openware Systems Inc. - Redwood City CA

International Classification:

G06F 1516
H04L 1228
H04M 1100

US Classification:

709206

Abstract:

Integration of telecommunication message services and other communication services is achieved by notifying a first user of a shared telephone number of a received message (e. g. , a facsimile message) by sending a notification message to the first user, e. g. , using e-mail, voice and/or data communications. The user may be identified by a unique identifier appended to the shared telephone number. The notification message may comprise an attachment which includes the received message, or the notification message may comprise a computer network address of a location where the received message may be accessed. For the latter case, the computer network address is preferably a universal resource locator (URL) associated with a web page at which the received message may be accessed. The received message may be accessed by allowing the user to view the message, or it may be accessed by allowing an user to down-load the message in any of a number of forms. For example, the message may be down-loaded to hard copy output device, e. g.

US Patent:

48062022, Feb 21, 1989

Filed:

Oct 5, 1987

Appl. No.:

7/104837

Inventors:

Daniel N. Tang - San Jose CA
Himanshu Choksi - Sunnyvale CA
Simon Wang - Sunnyvale CA
Simon M. Tam - San Mateo CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21312

US Classification:

156657

Abstract:

A method for growing tunnel oxides on a specially treated substrate surface. The method comprises steps for roughening the substrate surface to induce low tunneling voltage in the subsequently grown tunnel oxide layer. The tunnel oxide layer is grown in a low temperature steam cycle to further provide enhanced tunneling. The surface treatment comprises the steps of growing a first oxide layer to seal the surface of the substrate followed by growing a second oxide on the first oxide layer. In the preferred embodiment, a plasma etch utilizing an oxide etcher with high energy ion bombardment and an aluminum electrode is utilized to etch through the first and second oxide layers. The aluminum electrode causes sputtered aluminum on the second oxide layer's surface. The sputtered aluminum blocks the anisotropic etching leaving a grass type oxide residue on the substrate surface. The etching continues, overetching into the substrate surface.

US Patent:

48187119, Apr 4, 1989

Filed:

Aug 28, 1987

Appl. No.:

7/090334

Inventors:

Himanshu Choksi - Sunnyvale CA
Daniel Tang - San Jose CA

Assignee:

Intel Corporation - Santa Clara CA

International Classification:

H01L 21265

US Classification:

437 21

Abstract:

A method for growing a high quality oxide layer on the surface of a polysilicon film for use as an interpoly dielectric. The method comprises depositing a silicon film on a wafer and implanting the silicon film with phosphorous ions. The wafers are then sent into a diffusion tube to activate the dopant. This operation is carried out in an ambient of dry oxygen and the result is the silicon film is now polysilicon and an oxide layer has been grown on the polysilicon film. The wafers are then implanted using argon ions, the implantation is carried out through the oxide layer. The result is the surface layers of the polysilicon layer are rendered amorphous. The oxide layer grown on the polysilicon film is then removed. A new oxide layer is then grown on the polysilicon film. The result is an oxide layer with excellent physical and electrical characteristics.