Greta S Tsai

US Patent:

20210337638, Oct 28, 2021

Filed:

Apr 28, 2020

Appl. No.:

16/860642

Inventors:

- Falls Church VA, US
Dah-Weih Duan - Torrance CA, US
Dino Ferizovic - Torrance CA, US
Chunbo Zhang - Manhattan Beach CA, US
Greta S. Tsai - Los Angeles CA, US
Ming-Jong Shiau - Cerritos CA, US
Daniel R. Scherrer - Glendale CA, US
Martn E. Roden - Long Beach CA, US

International Classification:

H05B 6/68
H05B 6/80

Abstract:

An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.