Drake A Miller

US Patent:

8513102, Aug 20, 2013

Filed:

Oct 20, 2011

Appl. No.:

13/317522

Inventors:

Leonard Forbes - Corvallis OR, US
Drake A. Miller - Tigard OR, US

International Classification:

H01L 21/425
H01L 21/336

US Classification:

438514, 257E21409, 257288

Abstract:

The effects of random telegraph noise signal (RTS) or equivalently 1/f noise on MOS devices, circuits, and sensors is described. Techniques are disclosed for minimizing this RTS and low frequency noise by minimizing the number of ionized impurity atoms in the wafer, substrate, well, pillar, or fin behind the channel of the MOS transistors. This noise reduction serves to reduce the errors in devices, sensors, and analog integrated circuits and error rates in digital integrated circuits and memories.

US Patent:

20110220971, Sep 15, 2011

Filed:

Mar 17, 2011

Appl. No.:

13/050557

Inventors:

Homayoon Haddad - Beaverton OR, US
Jutao Jiang - Tigard OR, US
Jeffrey McKee - Tualatin OR, US
Drake Miller - Tigard OR, US
Chintamani Palsule - Lake Oswego OR, US
Leonard Forbes - Corvallis OR, US

Assignee:

SiOnyx, Inc. - Beverly MA

International Classification:

H01L 27/148
H01L 31/0236
H01L 31/0232
H01L 31/18
H01L 31/112

US Classification:

257228, 257432, 438 71, 438 70, 257E3113, 257E31127, 257E27151, 257E31073, 257E31001

Abstract:

Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

US Patent:

20110227138, Sep 22, 2011

Filed:

Sep 17, 2010

Appl. No.:

12/885158

Inventors:

Homayoon Haddad - Beaverton OR, US
Jutao Jiang - Tigard OR, US
Jeffrey McKee - Tualatin OR, US
Drake Miller - Tigard OR, US
Leonard Forbes - Corvallis OR, US
Chintamani Palsule - Lake Oswego OR, US

International Classification:

H01L 31/0232
H01L 31/113
H01L 31/18

US Classification:

257291, 257432, 257290, 438 71, 257E31128, 257E31085

Abstract:

Photosensitive devices and associated methods are provided. In one aspect, for example, a photosensitive imager device can include a semiconductor substrate having multiple doped regions forming at least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction. In one aspect, the textured region is operable to facilitate generation of an electrical signal from the detection of infrared electromagnetic radiation. In another aspect, interacting with electromagnetic radiation further includes increasing the semiconductor substrate's effective absorption wavelength as compared to a semiconductor substrate lacking a textured region.

US Patent:

20120146172, Jun 14, 2012

Filed:

Jun 20, 2011

Appl. No.:

13/164630

Inventors:

James Carey - Waltham MA, US
Drake Miller - Tigard OR, US

Assignee:

SiOnyx, Inc. - Beverly MA

International Classification:

H01L 31/0236

US Classification:

257443, 257461, 438 71, 257E3113

Abstract:

High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

US Patent:

20120313204, Dec 13, 2012

Filed:

Jun 11, 2012

Appl. No.:

13/493891

Inventors:

Homayoon Haddad - Beaverton OR, US
Jeffrey McKee - Tualatin OR, US
Jutao Jiang - Tigard OR, US
Drake Miller - Tigard OR, US
Chintamani Palsule - Lake Oswego OR, US
Leonard Forbes - Corvallis OR, US

International Classification:

H01L 31/0232
H01L 31/18

US Classification:

257432, 438 71, 257E31127

Abstract:

Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

US Patent:

20120313205, Dec 13, 2012

Filed:

Jun 11, 2012

Appl. No.:

13/493918

Inventors:

Homayoon Haddad - Beaverton OR, US
Jeffrey McKee - Tualatin OR, US
Jutao Jiang - Tigard OR, US
Drake Miller - Tigard OR, US
Chintamani Palsule - Lake Oswego OR, US
Leonard Forbes - Corvalils OR, US

International Classification:

H01L 31/0236
H01L 31/18
H01L 27/148

US Classification:

257432, 438 71, 257E3113, 257E27151, 257E31128

Abstract:

Photosensitive devices and associated methods are provided. In one aspect, for example, a frontside-illuminated photosensitive imager devices can include a semiconductor substrate having multiple doped regions forming a least one junction and a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation on an opposite side of the semiconductor substrate from the multiple doped regions. The textured region can include surface features sized and positioned to facilitate tuning to a preselected wavelength of light. The device can also include an electrical transfer element coupled to the semiconductor substrate and operable to transfer an electrical signal from the at least one junction.

US Patent:

20200111922, Apr 9, 2020

Filed:

Dec 9, 2019

Appl. No.:

16/708335

Inventors:

- Beverly MA, US
Drake Miller - Tigard OR, US

International Classification:

H01L 31/02
H01L 31/028
H01L 27/144
H01L 27/146
H01L 31/0236
H01L 31/103

Abstract:

High speed optoelectronic devices and associated methods are provided. In one aspect, for example, a high speed optoelectronic device can include a silicon material having an incident light surface, a first doped region and a second doped region forming a semiconductive junction in the silicon material, and a textured region coupled to the silicon material and positioned to interact with electromagnetic radiation. The optoelectronic device has a response time of from about 1 picosecond to about 5 nanoseconds and a responsivity of greater than or equal to about 0.4 A/W for electromagnetic radiation having at least one wavelength from about 800 nm to about 1200 nm.

US Patent:

20200105822, Apr 2, 2020

Filed:

Nov 18, 2019

Appl. No.:

16/687346

Inventors:

- Beverly MA, US
Jeffrey MCKEE - Tualatin OR, US
Jutao JIANG - Tigard OR, US
Drake MILLER - Tigard OR, US
Chintamani PALSULE - Lake Oswego OR, US
Leonard FORBES - Corvallis OR, US

International Classification:

H01L 27/146
H04W 4/90
H04H 20/57
H04H 20/59
H04H 20/72

Abstract:

Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.