Richard F. Reichelderfer - Castro Valley CA Diane C. Vogel - Union City CA Marian C. Tang - Hercules CA
Assignee:
Branson International Plasma Corporation - Hayward CA
International Classification:
C23F 102
US Classification:
156643
Abstract:
Process and gas mixture for etching aluminum in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the anisotropic character of the etch. A stable uniform plasma is generated at relatively high pressure and power levels, and this provides substantially faster removal of aluminum than has heretofore been possible in planar reactors.
Process And Gas Mixture For Etching Silicon Dioxide And Silicon Nitride
Diane C. Vogel - Fremont CA Marian C. Tang - Rodeo CA Richard F. Reichelderfer - Castro Valley CA
Assignee:
Branson International Plasma Corporation - Hayward CA
International Classification:
H01L 21306 C03C 1500 C03C 2506 B44C 122
US Classification:
156643
Abstract:
Process and gas mixture for etching silicon dioxide and/or silicon nitride in a plasma environment in a planar reactor. The gas mixture comprises a primary etching gas and a secondary gas which controls the selectivity of the etch. The process is carried out at relatively high pressure and power levels and provides substantially faster removal of silicon dioxide and/or silicon nitride than has heretofore been possible in planar reactors.