Dheeraj K Mohata

US Patent:

20110299326, Dec 8, 2011

Filed:

Jun 3, 2011

Appl. No.:

13/153027

Inventors:

VINAY SARIPALLI - UNIVERSITY PARK PA, US
DHEERAJ MOHATA - UNIVERSITY PARK PA, US
SAURABH MOOKHERJEA - HILLSBORO OR, US
SUMAN DATTA - PORT MATILDA PA, US
VIJAYKRISHNAN NARAYANAN - STATE COLLEGE PA, US

Assignee:

THE PENN STATE RESEARCH FOUNDATION - UNIVERSITY PARK PA

International Classification:

G11C 11/34

US Classification:

365156, 365154

Abstract:

A four transistor (4T) memory device is provided. The device includes a first cell transistor and a second cell transistor, the first and second cell transistors coupled to each other and defining latch circuitry having at least one multi-stable node. The device further includes a first access transistor and a second access transistor, the first and second access transistors coupling the at least one multi-stable node to at least one bit-line. In the device, each of the first and second cell transistors and each of the first and second access transistors is a unidirectional field effect transistor configured for conducting current in a first direction and to be insubstantially incapable of conducting current in a second direction.

US Patent:

20150372098, Dec 24, 2015

Filed:

Jun 19, 2015

Appl. No.:

14/744275

Inventors:

- Greensboro NC, US
Brian G. Moser - Jamestown NC, US
Jing Zhang - Greensboro NC, US
Thomas James Rogers - Greensboro NC, US
Dheeraj Mohata - Jamestown NC, US

International Classification:

H01L 29/205
H01L 29/10
H01L 29/08
H01L 29/737
H01L 29/66

Abstract:

The present disclosure relates to heterojunction bipolar transistors for improved radio frequency (RF) performance. In this regard, a heterojunction bipolar transistor includes a base, an emitter, and a collector. The base is formed over the collector such that a base-collector junction is formed between the base and the collector. The base-collector junction is configured to become forward-biased at a first turn-on voltage. The emitter is formed over the base such that a base-emitter junction is formed between the base and the emitter. The base-emitter junction is configured to become forward-biased at a second turn-on voltage, as opposed to the first turn-on voltage. Notably, the second turn-on voltage is lower than the first turn-on voltage.