Charlotte E Ludington

US Patent:

45339333, Aug 6, 1985

Filed:

Dec 7, 1982

Appl. No.:

6/447599

Inventors:

Paul W. Pellegrini - Bedford MA
Charlotte E. Ludington - Sherborn MA
Aleksandar Golubovic - Brookline MA
Melanie M. Weeks - Fitchburg MA

Assignee:

The United States of America as represented by the Secretary of the Air
Force - Washington DC

International Classification:

H01L 2948

US Classification:

357 15

Abstract:

A Schottky barrier diode formed of iridium-silicon material having a frequency response encompassing the 3. 0 to 5. 0 micrometer infrared band. The bandwidth, uniformity of response and silicon base material of such diodes renders them ideally suited for use in large scale focal plane arrays associated with infrared cameras.

US Patent:

45366586, Aug 20, 1985

Filed:

Jan 5, 1983

Appl. No.:

6/455715

Inventors:

Charlotte E. Ludington - Sherborn MA

Assignee:

The United States of America as represented by the Secretary of the Air
Force - Washington DC

International Classification:

H01J 4014

US Classification:

250578

Abstract:

A two dimensional focal plane array of Schottky internal emission photodiodes which sense radiation in their metallic regions on a silicon substrate for infrared imaging. The array is designed for mating with multiplexing circuitry via hybrid bump bonding techniques.

US Patent:

45310556, Jul 23, 1985

Filed:

Jan 5, 1983

Appl. No.:

6/455677

Inventors:

Freeman D. Shepherd - Chelmsford MA
Paul W. Pellegrini - Bedford MA
Charlotte E. Ludington - Sherborn MA
Melanie M. Weeks - Fitchburg MA

Assignee:

The United States of America as represented by the Secretary of the Air
Force - Washington DC

International Classification:

H01J 4014

US Classification:

250211J

Abstract:

A two dimensional focal plane array of Schottky photodiodes on a silicon substrate for infrared imaging. The array is designed for mating with multiplexing circuitry and has a self-guarding feature wherein adjacent Schottky electrodes act as guard electrodes. This feature allows a substantial increase of the focal plane area coverage ratio.