Changwu Hu

US Patent:

8518360, Aug 27, 2013

Filed:

Jul 6, 2012

Appl. No.:

13/542987

Inventors:

John Kouvetakis - Mesa AZ, US
Changwu Hu - Gilbert AZ, US
Ignatius S. T. Tsong - Tempe AZ, US
Andrew Chizmeshya - Chandler AZ, US

International Classification:

C01B 33/00
C30B 25/02

US Classification:

423324, 117 88, 2525213, 257E21102, 438503, 438507

Abstract:

The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.

US Patent:

20080113186, May 15, 2008

Filed:

Apr 8, 2005

Appl. No.:

11/662669

Inventors:

John Kouvetakis - Mesa AZ, US
Ignatius S.T. Tsong - Tempe AZ, US
Changwu Hu - Gilbert AZ, US
John Tolle - Gilbert AZ, US

International Classification:

H01L 21/20
C30B 25/02
B32B 33/00
C01B 33/06

US Classification:

428336, 117 88, 117 89, 423344, 428447

Abstract:

A method is provided for growing Si—Ge materials on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe, SiGeand SiGe. New hydrides with direct Si—Ge bonds derived from the family of compounds (HGe)SiH(x=1-4) are used to grow uniform, relayed and highly planar films with low defect densities at unprecedented low temperatures between about 300-450 C., circumventing entirely the need of thick compositionally graded buffer layer and lift off technologies. At about 500-700 C., SiGequantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides precise control of morphology, composition, structure and strain via the incorporation of the entire Si/Ge framework of the gaseous precursor into the film. The grown materials possess the required morphological and microstructural characteristics for applications in high frequency electronic and optical systems, as well as templates and buffer layers for development of commercial devices based on high mobility Si and Ge channels.

US Patent:

20100012972, Jan 21, 2010

Filed:

Nov 21, 2006

Appl. No.:

12/093279

Inventors:

John Kouvetakis - Mesa AZ, US
Cole J. Ritter III - Phoenix AZ, US
Changwu Hu - Gilbert AZ, US
Ignatius S.T. Tsong - Tempe AZ, US
Andrew Chizmeshya - Chandler AZ, US

Assignee:

The Arizona Board of Regents, a body corparate acting onbehalf of Arizona State University - Scottsdale AZ

International Classification:

H01L 29/165
C01B 33/00
C30B 25/02
H01B 1/06
H01L 21/20

US Classification:

257183, 423324, 117 88, 117103, 423325, 2525213, 438478, 438479, 257E29085, 257E2109, 257E21119

Abstract:

The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.