Antonio E Sanchez

US Patent:

20160237099, Aug 18, 2016

Filed:

Sep 19, 2014

Appl. No.:

15/025198

Inventors:

Antonio SANCHEZ - Branchburg NJ, US
Jean-Marc GIRARD - Paris Cedex 07, FR
Gennadiy ITOV - Branchburg NJ, US
Manish KHANDELWAL - Branchburg NJ, US
Matthew Damien STEPHENS - Branchburg NJ, US
Peng ZHANG - Branchburg NJ, US

International Classification:

C07F 7/02

Abstract:

Halogen free amine substituted trisilylamine and tridisilylamine compounds and a method of their preparation via de-hydrogenative coupling between the corresponding unsubstituted tnsilylames and amines catalyzed by transition metal catalysts is described. This new approach is based on the catalytic dehydrocoupling of a Si—H and a N—H moety to form an Si—N containing compound and hydrogen gas. The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—N containing products are halide free. Such compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si containing films.

US Patent:

20150094470, Apr 2, 2015

Filed:

Sep 19, 2014

Appl. No.:

14/491581

Inventors:

Antonio Sanchez - Jersey City NJ, US
Gennadily Itov - Flemington NJ, US
Peng Zhang - Montvale NJ, US
Matthew Damien Stephens - Morristown NJ, US

International Classification:

C07F 7/10

US Classification:

546 14, 556410, 548955, 548950, 548406, 548110

Abstract:

Compounds and method of preparation of Si—X and Ge—X compounds (X═N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X═N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Author:

Antonio Blanco Sanchez

ISBN #:

8449960185

Author:

Antonio Blanco Sanchez

ISBN #:

8478529861

Author:

Antonio Blanco Sanchez

ISBN #:

8485022556

Author:

Antonio Blanco Sanchez

ISBN #:

8485022688

Author:

Antonio Sanchez

ISBN #:

8430620737

Author:

Antonio Sanchez

ISBN #:

8445121405

Author:

Antonio Sanchez

ISBN #:

8466206523

Author:

Antonio Sanchez

ISBN #:

8466209549