Andras A Kuthi

US Patent:

6341574, Jan 29, 2002

Filed:

Nov 15, 1999

Appl. No.:

09/439661

Inventors:

Alan M. Schoepp - Ben Lomond CA
David J. Hemker - San Jose CA
Mark H. Wilcoxson - Piedmont CA
Andras Kuthi - Thousand Oaks CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

C23C 1600

US Classification:

118723I, 156345, 118723 MR, 118723 AN

Abstract:

A plasma processing system for processing a substrate which includes a single chamber, substantially azimuthally symmetric plasma processing chamber within which a plasma is both ignited and sustained for the processing. The plasma processing chamber has no separate plasma generation chamber. The plasma processing chamber has an upper end and a lower end. The plasma processing system includes a coupling window disposed at an upper end of the plasma processing chamber and an RF antenna arrangement disposed above a plane defined by the substrate when the substrate is disposed within the plasma processing chamber for the processing. The plasma processing system also includes an electromagnet arrangement disposed above the plane defined by the substrate. The electromagnet arrangement is configured so as to result in a radial variation in the controllable magnetic field within the plasma processing chamber in the region proximate the coupling window and antenna when at least one direct current is supplied to the electromagnet arrangement. The radial variation is effective to affect processing uniformity across the substrate.

US Patent:

6518705, Feb 11, 2003

Filed:

Dec 18, 2001

Appl. No.:

10/033807

Inventors:

Mark H. Wilcoxson - Piedmont CA
Andras Kuthi - Thousand Oaks CA
Michael G. R. Smith - Dublin CA
Alan M. Schoepp - Ben Lomond CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01J 724

US Classification:

31511151, 31511121, 156345

Abstract:

An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

US Patent:

6562190, May 13, 2003

Filed:

Oct 6, 2000

Appl. No.:

09/685051

Inventors:

Andras Kuthi - Thousand Oaks CA
Andreas Fischer - Oakland CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H05H 100

US Classification:

15634544, 20429834

Abstract:

The present invention provides a system, apparatus, and method for processing a wafer using a single frequency RF power in a plasma processing chamber. The plasma processing system includes a modulated RF power generator, a plasma processing chamber, and a match network. The modulated RF power generator is arranged to generate a modulated RF power. The plasma processing chamber is arranged to receive the modulated RF power for processing the wafer and is characterized by an internal impedance during the plasma processing. The plasma processing chamber includes an electrostatic chuck for holding the wafer in place with the electrostatic chuck including a first electrode disposed under the wafer for receiving the modulated RF power. The plasma processing chamber further includes a second electrode disposed over the wafer. The modulated RF power generates plasma and ion bombardment energy for processing the wafer.

US Patent:

6592710, Jul 15, 2003

Filed:

Apr 12, 2001

Appl. No.:

09/834523

Inventors:

Neil Benjamin - Palo Alto CA
Andras Kuthi - Thousand Oaks CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01L 213065

US Classification:

15634548, 118723 AN, 118723 I, 15634528, 15634524

Abstract:

An apparatus for controlling the voltage applied to a shield interposed between an induction coil powered by a power supply via a matching network, and the plasma it generates, comprises a shield, a first feedback circuit, and a second feedback circuit. The power supply powers the shield. The first feedback circuit is connected to the induction coil for controlling the power supply. The second feedback circuit is connected to the shield for controlling the voltage of the shield. Both first and second feedback circuits operate at different frequency ranges. The first feedback circuit further comprises a first controller and a first sensor. The first sensor sends a first signal representing the power supplied to the inductive coil to the first controller. The first controller adjusts the power supply such that the power supplied to the inductor coil is controlled by a first set point. The second feedback circuit further comprises a second sensor, a second controller, and a variable impedance network.

US Patent:

6653791, Nov 25, 2003

Filed:

Oct 12, 2001

Appl. No.:

09/977569

Inventors:

Alan M. Schoepp - Santa Cruz CA
Andras Kuthi - Thousand Oaks CA

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01J 724

US Classification:

31511121, 31511151, 118723 R

Abstract:

A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber.

US Patent:

6838832, Jan 4, 2005

Filed:

Sep 26, 2002

Appl. No.:

10/259160

Inventors:

Arthur M. Howald - Pleasanton CA, US
Andras Kuthi - Thousand Oaks CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01J 724
H01P 512

US Classification:

31511121, 333 81 R

Abstract:

Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.

US Patent:

6841943, Jan 11, 2005

Filed:

Jun 27, 2002

Appl. No.:

10/180978

Inventors:

Vahid Vahedi - Albany CA, US
Peter Loewenhardt - Pleasanton CA, US
Albert Ellingboe - Dublin, IE
Andras Kuthi - Thousand Oaks CA, US
Andreas Fischer - Castro Valley CA, US

Assignee:

Lam Research Corp. - Fremont CA

International Classification:

H01J 724

US Classification:

31511171, 31511121, 31511151, 31511181, 118723 I

Abstract:

A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.

US Patent:

6842147, Jan 11, 2005

Filed:

Jul 22, 2002

Appl. No.:

10/200833

Inventors:

Arthur M. Howald - Pleasanton CA, US
Andras Kuthi - Thousand Oaks CA, US
Mark Henry Wilcoxson - Piedmont CA, US

Assignee:

Lam Research Corporation - Fremont CA

International Classification:

H01Q 126

US Classification:

343701, 343742, 343867, 118723 I

Abstract:

An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.